NX3008NBKS,115

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NX3008NBKS,115 is a type of Field Effect Transistor (FET) array typically used in various applications such as switching, amplification, and signal processing. The device is typically offered in two packages namely SOIC-12 (small-outline package with 12 leads) and PDIP-16 (plastic dual-in-line package with 16 leads). This particular version of FET array is available in both P-Channel and N-Channel versions.

FET arrays are basically devices composed of multiple FETs connected in parallel or in series. This particular type of FET array consists of four individually controlled FETs connected in parallel. Two of the FETs in the NX3008NBKS,115 can be configured as N-Channel while the other two can be setup as P-Channel. The four FETs in the device are individually controlled and can be turned off or on via the Enable/Disable pins. Each FET has a gate terminal and three pin legs, each connected to a source, drain and ground, respectively.

When a voltage is applied at the gate terminal, the source pin receives a conduction current which results a conducting channel (or ‘on-state’) between the two pins. On the other hand, the source pin will not receive conduction current resulting to an open circuit or ‘off-state’ between the two pins. This switch-like operation of the FET array is the primary thing that makes this device applicable in applications such as switching, amplification, and signal processing.

The individual FETs in the NX3008NBKS,115 array have a maximum drain-source voltage of 40V and a maximum gate-source voltage of 20V. The upper limit on the current that the FET array can pass is 18A while its maximum power dissipation is 90W. The operating temperature range of the device is -55 degrees Celsius to 125 degrees Celsius.

The NX3008NBKS, 115 is commonly used in power switching applications since it can provide high electromagnetic insulation and efficiency. Additionally, since the device is an array, it can be used for various signal processing operations such as signal combining, amplification, frequency mixing, and signal inversion. The device is also used in other applications such as automotive, industrial, and medical applications.

In summary, the NX3008NBKS,115 is a 4-FET Field Effect Transistor array offering both N-Channel and P-Channel configurations. It is capable of providing a maximum drain-source voltage of 40V and a maximum gate-source voltage of 20V. Moreover, the FET array has a maximum current limit of 18A and a maximum power dissipation of 90W. Due to its attributes, this device can be used in a range of applications such as power switching, signal processing, automotive, industrial, and medical applications.

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