NXH80T120L2Q0S2G

NxH80T120L2Q0S2G Application Field and Working Principle

The NxH80T120L2Q0S2G is a high-voltage insulated-gate bipolar transistor (IGBT) module developed by Infineon Technologies. This IGBT module has superior current-carrying capacity and features a wide current range for various applications. In this article, we will discuss the application field and working principle of the NxH80T120L2Q0S2G.

Application Field of NxH80T120L2Q0S2G

The NxH80T120L2Q0S2G is an IGBT module that was specifically designed for automotive powertrain applications. This module has excellent power cycling capability, making it an ideal choice for applications such as on/off transitions, speed control, and signal conditioning in automotive electronic power modules. It is also suitable for power conversion systems and machines that require high current-carrying capacity and fast switching frequency.

Additionally, the NxH80T120L2Q0S2G has a wide current range, from 6 to 12 amps, making it suitable for a wide variety of powertrain applications. Its high-voltage and current ratings enable the NxH80T120L2Q0S2G to be used for applications requiring higher power. It has a temperature range from -40°C to 150°C and a surge current capability of up to 70A at 150°C, making this IGBT module suitable for a wide range of automotive powertrain applications.

Working Principle of NxH80T120L2Q0S2G

The NxH80T120L2Q0S2G is a IGBT module that primarily functions as a switch. An IGBT is a type of semiconductor that can switch large amounts of electric current. It combines the best features of two common components found in electronic circuits: the transistor and the thyristor. This allows the IGBT to be used in a wide variety of applications, including motor control, power conversion, and AC-DC and DC-DC power conversion.

The IGBT module consists of a gate, an anode and a cathode. The gate is a semiconductor switch that acts as the current control terminal for the module. When the gate is activated (by providing the proper electrical input), it allows current to flow between the anode and the cathode. When the gate is not activated, the module will not conduct current and is effectively switched off.

The NxH80T120L2Q0S2G has a surge current capability of up to 70A at 150°C and a high current carrying capacity. It also features a higher reverse blocking voltage that ensures switching reliability and improved performance.

The NxH80T120L2Q0S2G is designed for DC and pulsed gate operation. It is also designed to minimize switching losses and minimize noise, making it ideal for wide current-range applications such as motor control, power conversion, and AC-DC and DC-DC power conversion.

In conclusion, the Infineon Technologies NxH80T120L2Q0S2G is an IGBT module that is specifically designed for automotive powertrain applications. It has a wide current range, a high current carrying capacity, and a temperature range of -40°C to 150°C. It also features a surge current capability of up to 70A at 150°C, making it an ideal choice for applications such as on/off transitions, speed control, and signal conditioning in automotive electronic power modules.