NXH80T120L2Q0SG

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The NXH80T120L2Q0SG is a type of Insulated Gate Bipolar Transistor (IGBT) module manufactured by Nexperia, a leading supplier of semiconductor and electron related products. This specific module is part of the newly launched ‘High Current’ range of IGBTs that feature both aerospace and industrial grade characteristics for reliable operation. IGBT modules, such as the NXH80T120L2Q0SG, are specialized transistors that combine the features of both MOSFET and bipolar transistors, providing them with both high power switching and low power dissipation capability.

The selection of an IGBT module, such as the NXH80T120L2Q0SG, is dependent on several parameters; however, the two primary factors to consider during selection include the application field and working principle of the device. This particular module’s application field is thought to be mainly industrial, with potential uses in applications such as motor control, switched mode power supplies and uninterruptible power supply systems.

The working principle of the NXH80T120L2Q0SG is based on Relay Lift-Off (RLO) technology, offering improved performances and reliability in comparison to traditional IGBTs. When compared to traditional IGBTs, RLO IGBTs are designed with multiple optimised features such as improved turn-on rates, low hardware losses, operation at higher temperatures and increased current handling capacity. Additionally, the NXH80T120 is also equipped with a ‘diode’ body diode technology which helps to reduce snubbing losses associated with antiparallel diodes.

At the heart of the NXH80T120L2Q0SG is a NPN Junction Collector which is similar to a conventional bipolar transistor, this particular junction collector is attached to an insulated gate mechanism. This gate mechanism allows the device to be on or off through the use of a high frequency signal, allowing the transistor to operate in either a saturated or cut-off mode. In contrast to traditional IGBTs, RLO IGBTs operate at higher switching frequencies, offering higher levels of power density, allowing the device to dissipate less overall power during operation.

The advantages of using RLO IGBTs, such as the NXH80T120L2Q0SG, include: increased reliability, lower switching losses, improved efficiency and increased power ratings. Additionally, RLO IGBT modules also feature higher temperature ratings than traditional IGBTs, making them suitable for applications where thermal conditions are more severe. This also makes them suitable for harsh environments, such as those found in industrial or aerospace applications.

Overall, the NXH80T120L2Q0SG is a great choice for those looking for an IGBT module with both industrial and aerospace grade features, offering improved switching performance and higher current handling capacities. It features the advantages of RLO technology, such as improved switching frequencies and reduced thermal losses, while operating at higher temperatures. This makes the device suitable for applications requiring both high-power switching capabilities as well as lower loss, higher efficiency operation.

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