Allicdata Part #: | 1740-1225-ND |
Manufacturer Part#: |
NXPSC04650Q |
Price: | $ 1.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | WeEn Semiconductors |
Short Description: | DIODE SCHOTTKY 650V 4A TO220AC |
More Detail: | Diode Silicon Carbide Schottky 650V 4A Through Hol... |
DataSheet: | NXPSC04650Q Datasheet/PDF |
Quantity: | 4969 |
1 +: | $ 1.56240 |
10 +: | $ 1.40238 |
100 +: | $ 1.12720 |
500 +: | $ 0.92610 |
1000 +: | $ 0.76734 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 4A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 170µA @ 650V |
Capacitance @ Vr, F: | 130pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | 175°C (Max) |
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The NXPSC04650Q diode is classified as a one of the most widely used Rectifiers - Single type diodes. It is widely demanded in the power electronics industry due to its various applications. The device is widely used in power supply circuits, converters, motor drives and other switching power supply circuits.
The NXPSC04650Q is a fast recovery Schottky barrier rectifier with common cathode. It has a maximum average forward current rating of 4.0A and a maximum forward voltage drop of 650mV at a junction temperature of 150ºC. It also features a maximum reverse leakage current of 10uA at a junction temperature of 25ºC and thermal resistance of 0.098°C/W. The NXPSC04650Q utilizes a reverse recovery time of 30.7ns. This makes it ideal for applications requiring low power dissipation.
The NXPSC04650Q application field can be found in a wide range of applications. Its fast recovery and low power dissipation make it perfect for power supplies and converters. It can be used for switch-mode power supplies, motor drives, or any other application involving high current switching or load switching. In addition, it can be used in ripple filters and in protection circuits. This diode is also suitable for use in automotive and industrial applications, as well as being used as part of a solar panel.
The working principle of the NXPSC04650Q is based on its Schottky barrier rectifier structure. The Schottky barrier structure enables the device to attain the fast recovery characteristics of a typical power diode and the low power dissipation of a Schottky diode by utilizing a Schottky junction. When forward biased, the NXPSC04650Q allows current to pass easily, due to the low voltage drop across the junction. In reverse bias, the junction becomes open circuit, preventing current flow. By virtue of this arrangement, the diode is capable of providing quick response at high switching speeds.
In conclusion, the NXPSC04650Q Rectifiers - Single type diode is a wide popular device in the power electronic industry due to its features and performance. Its fast recovery and low power dissipation makes it suitable for applications such as motor drives, switch-mode power supplies and protection circuits. It also finds usage in automotive, industrial and solar panel applications. Moreover, its working principle is based on the Schottky barrier rectifier structure, which enables the device to attain the fast recovery characteristics of a typical power diode and the low power dissipation of a Schottky diode.
The specific data is subject to PDF, and the above content is for reference
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