Allicdata Part #: | NZ3F5V6T1G-ND |
Manufacturer Part#: |
NZ3F5V6T1G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 5.6V 800MW SOD323FL |
More Detail: | Zener Diode 5.6V 800mW ±7.14% Surface Mount SOD-32... |
DataSheet: | NZ3F5V6T1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.04882 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±7.14% |
Power - Max: | 800mW |
Impedance (Max) (Zzt): | 60 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 10mA |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SOD-323FL |
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Diodes - Zener - Single
NZ3F5V6T1G is a single zener diode, typically used in the design of power supplies and various other electronic circuits. The zener diode is a two-terminal semiconductor device, which has the effect of regulating voltage across its terminals. It is designed so that the voltage across it remains approximately constant for wide variations in current.
Application Field
NZ3F5V6T1G is suitable for ripple current regulation, noise suppression in digital circuits, voltage clamping and peak current protection applications. It can also be used in transient protection circuits, such as the surge protection circuits used in automobiles and homes. In addition, NZ3F5V6T1G can be utilized for voltage regulation in power supplies, maintaining a stable output voltage even when AC power supply undergoes fluctuations.
Working Principle
The working principle of a zener diode is based on the breakdown phenomena in solid-state physics. When a certain electric field is exceeded, a conducting path is created between the two terminals of the diode in normal direction. This is known as the reverse breakdown voltage. This breakdown voltage persists even when the voltage is reduced to normal level due to the availability of hole carriers in the depleted region. When the diode is connected in reverse bias, the electric field increases and when it reaches the breakdown voltage value, the diode starts conducting and the voltage across it is limited.
NZ3F5V6T1G is specifically designed to limit the reverse voltage to a very specific level. By adjusting the doping level, it is possible to manufacture zener diodes with a very precise breakdown voltage. For example, the breakdown voltage of NZ3F5V6T1G is 5 V ± 0.2 V. This precisely calculated breakdown voltage is the key feature of zener diodes and makes them ideal components to use in various voltage regulation circuits.
The specific data is subject to PDF, and the above content is for reference
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