NZH3V9B,115 Allicdata Electronics

NZH3V9B,115 Discrete Semiconductor Products

Allicdata Part #:

1727-5072-2-ND

Manufacturer Part#:

NZH3V9B,115

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 3.9V 500MW SOD123F
More Detail: Zener Diode 3.9V 500mW ±5% Surface Mount SOD-123F
DataSheet: NZH3V9B,115 datasheetNZH3V9B,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02282
6000 +: $ 0.01985
15000 +: $ 0.01687
30000 +: $ 0.01588
75000 +: $ 0.01489
150000 +: $ 0.01323
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Base Part Number: NZH3V9
Description

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NZH3V9B, 115 is a single zener diode which is widely used in semiconductor markets nowadays. It has variants of segments in different working fields and is mainly used for regulation and protection.

These diodes are suitable for a broad range of applications, including power supplies, signal processing, instrumentation, communications, laser systems and personal computers. Moreover, it is convenient for users to select the most suitable diode to satisfy the specific requirements.

As for its working principle, NZH3V9B, 115 is intended for use in a voltage regulator circuit , steady voltage source or similar applications. The diode consists of the main part cathode and two anode connections. When the current flowing across the diode reaches its limiting value, it enters its reverse breakdown region. The voltage on anode side is clamped to the zener voltage.

As the current increases, the voltage between cathode and anode drops and can be clamped to a constant value. When the voltage exceeds the maximum rated voltage level, the current is shorted and reduced. For both reverse breakdown and normal operating regions, the current situation can be fixed, thus the voltage is kept at a constant level.

The reverse breakdown region of the diode is determined by the zener voltage of the diode and it is typically the highest value for the given diode. In the reverse breakdown region, the diode will work as a clamp to regulate the voltage by limiting the current and controlling the voltage atset value. As the current exceeds the zener voltage, the cathode-anode voltage are clamped to the zener voltage level and current continues to be limited.

In addition, it produces low losses in the linear region while in the reverse breakdown region, the power dissipation is highest and the losses are lower in comparison with other types of diodes. Moreover, it provides fast switching capabilities, low reverse current leakage, and good temperature and power stability.

As a single zener diode, NZH3V9B, 115 is able to meet a variety of application demands due to its working principle. It is not only reliable, but also convenient for users to choose the most suitable selection to satisfy specific requirements. Boasting of various advantages, these diodes are becoming more and more popular in the markets.

The specific data is subject to PDF, and the above content is for reference

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