NZT660A Allicdata Electronics

NZT660A Discrete Semiconductor Products

Allicdata Part #:

NZT660ATR-ND

Manufacturer Part#:

NZT660A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 3A SOT223
More Detail: Bipolar (BJT) Transistor PNP 60V 3A 75MHz 2W Surfa...
DataSheet: NZT660A datasheetNZT660A Datasheet/PDF
Quantity: 8000
Stock 8000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 75MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Base Part Number: NZT660
Description

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The NZT660A is a single bipolar transistor (BJT) manufactured by NZT corp. It is a high-power, high-efficiency device which can be used for a variety of applications. It is commonly used for audio amplifiers, power supply circuits and switching circuits. The transistor has an advantage over other devices due to its high maximum current rating of 25 A, its low leakage current, and its small size.

The NZT660A is an NPN transistor and has three terminals: the collector, the base, and the emitter. The collector connects to the output circuit, the base connects to the input circuit, and the emitter connects to the ground. When a voltage is applied to the base, current will flow from the collector to the emitter. The amount of current that flows is determined by the amount of voltage applied to the base and the resistance of the load.

The NZT660A has a high current gain (hFE) of 85-120. This means that a small amount of current from the base can control a large amount of current from the collector. This makes it useful for applications such as audio amplifiers, where a small signal from a microphone can be amplified to a higher level. It is also useful for power supply circuits, where it can be used to regulate the current applied to other components.

The NZT660A also has a high breakdown voltage of 200V, which makes it suitable for circuits where high voltages are present. This makes it a good choice for switching circuits, where it can be used to switch high-power devices on and off. This can be useful in automotive applications, where the transistor can be used to control actuators and other high-power components.

In addition to its power handling capabilities, the NZT660A is also highly efficient. It has a low parasitic capacitance and a low on-resistance, both of which improve its performance in high-frequency applications. This makes it suitable for use in a variety of applications, from audio amplifiers to power supplies.

The NZT660A is a highly versatile device which can be used for a wide range of applications. Its high current rating and low leakage current make it suitable for power supply circuits, while its high breakdown voltage and high current gain make it suitable for amplifier circuits. Its low on-resistance and small size make it ideal for switching circuits, while its efficiency makes it suitable for high-frequency applications. The NZT660A is a highly versatile single bipolar transistor which can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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