NZX3V6A,133 Allicdata Electronics

NZX3V6A,133 Discrete Semiconductor Products

Allicdata Part #:

1727-4744-3-ND

Manufacturer Part#:

NZX3V6A,133

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 3.6V 500MW ALF2
More Detail: Zener Diode 3.6V 500mW ±3% Through Hole ALF2
DataSheet: NZX3V6A,133 datasheetNZX3V6A,133 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01786
30000 +: $ 0.01608
50000 +: $ 0.01429
100000 +: $ 0.01339
250000 +: $ 0.01191
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: ALF2
Base Part Number: NZX3V6
Description

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The NZX3V6A, 133 is a type of Zener diode, designed specifically for use in single applications. This diode is designed to breakdown and clip the input voltage, so that it can be used as an overvoltage protection device. It is designed to have a peak power rating of 800mW and a maximum operating temperature range of -55°C to +150°C.

This diode has multiple applications in consumer electronics and industrial devices. It can be used as a voltage regulator, to limit the inrush current in a load circuit, or to protect against ESD. It can also be used to balance the current levels in a circuit. In addition, the NZX3V6A, 133 can also be used to detect electrical faults in a device, as it can clip stray voltages and prevent them from reaching the circuit.

The diode is characterized by a forward voltage drop of 3.2V and a reverse voltage of 6.6V. Its forward saturation current is 15mA and its reverse leakage current are 30nA. The storage time is typically 0.1us and its reverse recovery time is typically 120nS. The diode is designed to be able to withstand a maximum surge current of 5A.

The working principle of the NZX3V6A, 133 diode is simple. A reverse bias is applied to the diode, which increases the potential barrier between the semiconductor material of the diode and the junction. When the reverse-bias voltage reaches the Zener breakdown voltage, electrons tunnel through the junction, resulting in a current flow. As long as the forward-bias voltage does not exceed the peak inverse voltage, the current flowing through the diode will remain constant. By taking advantage of this property, the diode can be used as a voltage regulator or for other applications, such as ESD protection.

The NZX3V6A, 133 diode is typically constructed from a silicon semiconductor material and features a metal-oxide-semiconductor (MOS) structure. This means that it is capable of providing good levels of reliability, as well as good levels of thermal stability and electrical insulation. Furthermore, the diode is also RoHS compliant, making it suitable for use in a wide range of applications.

In conclusion, the NZX3V6A, 133 diode is an efficient and reliable diode that is designed specifically for single applications. It is characterized by a low forward voltage drop, high reverse voltage, and low reverse-leakage current and is capable of operating within a wide temperature range. Furthermore, the diode is suitable for a variety of applications, including voltage regulation, ESD protection, and current balancing.

The specific data is subject to PDF, and the above content is for reference

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