OP550B Allicdata Electronics
Allicdata Part #:

365-1071-ND

Manufacturer Part#:

OP550B

Price: $ 0.43
Product Category:

Sensors, Transducers

Manufacturer: TT Electronics/Optek Technology
Short Description: PHOTOTRNSISTR NPN 935NM SIDELOOK
More Detail: Phototransistor 935nm Side View Radial
DataSheet: OP550B datasheetOP550B Datasheet/PDF
Quantity: 15900
1 +: $ 0.39690
100 +: $ 0.37498
250 +: $ 0.36160
500 +: $ 0.34821
1000 +: $ 0.33482
2500 +: $ 0.32812
5000 +: $ 0.31473
10000 +: $ 0.30803
Stock 15900Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 4.7mA
Current - Dark (Id) (Max): 100nA
Wavelength: 935nm
Viewing Angle: --
Power - Max: 100mW
Mounting Type: Through Hole
Orientation: Side View
Operating Temperature: -40°C ~ 100°C (TA)
Package / Case: Radial
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A phototransistor, also sometimes referred to as a P-channel bipolar junction transistor (BJT), is a type of electronic component that is capable of detecting light and producing a corresponding electronic signal. The OP550B is an Agilent P-channel bipolar phototransistor commonly used in optical sensing applications. In this article, we will discuss the application field and working principle of the OP550B.

The OP550B is designed so that very little current flows until light is present in the sensor area, allowing it to act as a switch, controlling or modulating electronic systems. This type of phototransistor is typically used in a variety of optical sensing applications, such as infrared (IR) remote control receivers, photosensors, proximity detectors, and non-contact motion and position sensing. In addition, these phototransistors can be used to control the flow of current in LED displays, as well as monitor light intensity changes in automotive and robotics systems.

The OP550B consists of a semiconductor junction device, which is formed when two semiconductor materials, such as silicon and gallium arsenide, are brought into contact with each other. The junction device creates a depletion region, and an electric field is applied to this depletion region to allow current to flow. When light is incident on the OP550B, it is absorbed by the junction and causes electrons to become free and move throughout the device.

The presence of the light creates a shift in the depletion region, resulting in an increase in current flow. This current flow is used to regulate the electronic signals and drive the external circuits, allowing the OP550B to be used in many different optical sensing applications. Moreover, the device is designed with a cut-off wavelength of 680nm, making it ideal for applications that require a lower photosensitivity.

The OP550B has a fast response time and is capable of producing reliable and accurate responses, making it suitable for a wide range of applications. Moreover, it can be used in various high-speed and low-power applications and is capable of operating at temperatures up to 125 degrees Celsius.

The OP550B is an excellent way to detect and measure light, making it ideal for a variety of optical sensing applications. Its fast response time and reliable performance make it an ideal choice for a wide range of applications, from automotive and robotics systems to LED displays and remote control receivers.

The specific data is subject to PDF, and the above content is for reference

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