OP552C

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Optical sensors are an important class of transducers used to detect physical changes in light intensity, as well as changes in the direction or angle of light being provided. Phototransistors are one type of optoelectronic device used to detect visible, infrared, and ultraviolet radiation in real-world applications. The OP552C phototransistor is a versatile device designed specifically for high frequency and video applications.

The OP552C phototransistor is an NPN silicon bipolar device with an active area of 5.40 mm². It is enclosed in a 4-pin package and has a built-in base-to-emitter diode that reduces reverse current, along with a built-in base resistor that reduces output resistance and power dissipation. The device can operate in either photovoltaic or photoconductive modes and can be used in various applications such as switch point detection, door sensors, proximity sensing, motion sensing, or security systems. This phototransistor is designed for high-frequency applications with a total harmonic distortion of less than 0.1%.

One of the major advantages of the OP552C phototransistor is its low-noise operation. With a low-noise figure, the device can accurately detect even the smallest levels of light intensity. This feature makes the device well-suited for applications where a small signal needs to be detected, such as in motion sensing devices. The device also has a wide dynamic range, allowing it to accurately detect both large and small signals. The wide range of sensitivity also helps to improve the device\'s accuracy in detecting changes in light intensity.

The OP552C phototransistor also features a fast response time. This helps the device rapidly detect changes in light intensity, allowing it to respond quickly to a stimulus. In addition, the device also features a low-junction-bias current, which increases its efficiency and reduces its power consumption. This low bias current helps to prolong the device\'s life, as it will not be subject to excessive wear and tear.

The working principle of the OP552C phototransistor is based on the application of the photoelectric effect. When a light beam is applied to the sensitive surface of the device, the photoelectric effect causes electrons to be emitted from the junction surface due to the difference in energy level between the surface and the free electrons. This causes an increase in current in the collector-emitter junction, which can then be detected and measured. In photoconductive applications, the device is used to measure changes in the resistance of the junction due to the incident light.

The OP552C phototransistor is an ideal device for a variety of high-frequency and video applications. With its low-noise operation, wide dynamic range, and fast response time, the device is well-suited for use in switch point detection, door sensors, proximity sensing, motion sensing, and security systems. Additionally, its low-junction-bias current helps to prolong its life and reduce its power consumption, allowing it to be used in applications where power efficiency is of utmost importance.

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