
Allicdata Part #: | 365-1080-ND |
Manufacturer Part#: |
OP802WSL |
Price: | $ 1.72 |
Product Category: | Sensors, Transducers |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | PHOTOTRANSISTOR NPN 890NM TO-18 |
More Detail: | Phototransistor 890nm Top View TO-206AA, TO-18-3 M... |
DataSheet: | ![]() |
Quantity: | 881 |
1 +: | $ 1.55610 |
100 +: | $ 1.49278 |
250 +: | $ 1.44129 |
500 +: | $ 1.38338 |
1000 +: | $ 1.33833 |
2500 +: | $ 1.28685 |
5000 +: | $ 1.24825 |
Series: | * |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 50mA |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 890nm |
Viewing Angle: | -- |
Power - Max: | 250mW |
Mounting Type: | Through Hole |
Orientation: | Top View |
Operating Temperature: | -65°C ~ 125°C (TA) |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical sensors can be used to detect or measure light intensity. Phototransistors, one type of optical sensor, use the principle of a junction between two dissimilar materials to detect light. The OP802WSL is a silicon NPN phototransistor, designed to detect and measure light intensity.
The OP802WSL sensor operates using the principle of photoelectric conductance, which allows current to flow through its P/N junction when light is incident upon it. This occurs when the photons of visible and infrared radiation excite electrons from the P-side of the junction and cause them to move into the N-side. As this occurs, the current that passes through the junction differs from the bias current.
The configuration of the OP802WSL phototransistor is quite simple: the device consists of a single layer of n+-type silicon, P-type silicon, and background implants. The N-side is exposed to light, which enters the junction as infrared radiation. Light is then mixed with electrons in a tunnel region, causing the current to rise until it reaches an equal balance to the bias current. When the bias current is greater than the current induced by the light, the reverse biased junction will generate a stronger signal.
The OP802WSL phototransistor has a wide range of application fields, including:
- Building automation and lighting control
- High speed data transmission
- Motion sensing
- Machine vision and industrial automation
- Military and Aerospace
In each of these application fields, the OP802WSL can be used to detect and measure light intensity and determine whether objects are present in a designated area. The phototransistor is also useful in sensing temperature changes within a system, as the amount of current that flows through the device is directly proportional to the temperature. Finally, the OP802WSL can be used in A/V equipment, such as CCTV cameras and projectors, to detect when equipment is in use.
The OP802WSL is a powerful, versatile phototransistor, designed to detect light intensity in various application fields. Its simple structure, wide range of operation, and high sensitivity make the OP802WSL an ideal choice for sensing objects or measuring temperatures in both industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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