OP804SL Allicdata Electronics
Allicdata Part #:

365-1081-ND

Manufacturer Part#:

OP804SL

Price: $ 1.47
Product Category:

Sensors, Transducers

Manufacturer: TT Electronics/Optek Technology
Short Description: PHOTOTRANSISTOR NPN 890NM TO-18
More Detail: Phototransistor 890nm Top View TO-206AA, TO-18-3 M...
DataSheet: OP804SL datasheetOP804SL Datasheet/PDF
Quantity: 4301
1 +: $ 1.33560
100 +: $ 1.28520
250 +: $ 1.23480
500 +: $ 1.19070
1000 +: $ 1.14661
2500 +: $ 1.10880
5000 +: $ 1.07101
Stock 4301Can Ship Immediately
$ 1.47
Specifications
Series: *
Packaging: Bulk 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 50mA
Current - Dark (Id) (Max): 100nA
Wavelength: 890nm
Viewing Angle: --
Power - Max: 250mW
Mounting Type: Through Hole
Orientation: Top View
Operating Temperature: -65°C ~ 125°C (TA)
Package / Case: TO-206AA, TO-18-3 Metal Can
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical sensors are able to sense, monitor, and measure light. Among all the optical sensors, Phototransistors possess unique properties that make them suitable for various applications. OP804SL is an example of a Phototransistor which has an extremely wide application field.

Normally, Phototransistors are photovoltaic semiconductor devices, where the emitter is normally biased and the collector acts as a load resistor. When the device is exposed to light, the output current changes proportionally. OP804SL can be defined as a highly stable phototransistor with a wide spectral response from 400nm to 1100nm, which makes it a potential choice for applications across various fields.

The working principle of OP804SL can be explained in two ways. Firstly, the principle of the phototransistor can be seen when light strikes the base junction of the transistor. When the base junction is exposed to light, it creates an electric field which causes a phenomenon called electron-hole excitation. This excitation allows the electrons and holes to move to their respective collector and emitter sides, thus creating a nearly linear dependence between the light intensity and the current passage.

Secondly, when the current between the emitter and base increases, the output current between the collector and the base also increases. This phenomenon is called collector-base current gain and is expressed as a ratio of the collector current on the base current. OP804SL has a large collector-base current gain of 230, which provides it with a great susceptibility to even the slightest changes in light intensity.

Several factors have contributed to making OP804SL a promising candidate for applications such as photometry, infrared transmission and reception, light sensing and switch functions, light intensity regulation, and Alarm Systems. The wide spectral range of OP804SL makes it suitable for applications such as light-to-frequency or light-to-voltage conversions in medical or industrial automation. The superior thermal resistance and collector-base current gain of the phototransistor enable it to operate reliably even in harsh working conditions.

Apart from its wide application field, OP804SL is also known for its quick response time and exceptional stability. It can operate accurately and consistently even when the ambient light conditions vary drastically. Its fast switching speed and reliable operation make this device suitable for applications such as photography and cinematography.

OP804SL makes a great choice for optical sensing and sensing applications. Its wide spectral and current gain range, combined with its exceptional stability, makes it perfect for a variety of applications. From medical and industrial automation to photography and cinematography, this phototransistor has been proven to be an efficient and reliable choice.

The specific data is subject to PDF, and the above content is for reference

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