Allicdata Part #: | 365-2082-2-ND |
Manufacturer Part#: |
OPR5011T |
Price: | $ 9.12 |
Product Category: | Sensors, Transducers |
Manufacturer: | TT Electronics/Optek Technology |
Short Description: | SENSOR REFLECTIVE SMCC |
More Detail: | Photodiode 1µs |
DataSheet: | OPR5011T Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 8.29094 |
500 +: | $ 7.98595 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Wavelength: | -- |
Color - Enhanced: | -- |
Spectral Range: | -- |
Diode Type: | -- |
Responsivity @ nm: | -- |
Response Time: | 1µs |
Current - Dark (Typ): | -- |
Active Area: | 0.50mm² (x6) |
Viewing Angle: | -- |
Operating Temperature: | -40°C ~ 100°C |
Mounting Type: | Surface Mount |
Package / Case: | -- |
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Optical sensors are devices used to detect and measure light and electromagnetic radiation. diode sensors are a type of photoelectric device that relies on the photoelectric effect in order to measure light. The OPR5011T is an example of a photodiode utilized in optical sensors, and its application field and working principle is discussed in this article.
Application Field
The OPR5011T is generally used for monitoring and detecting light intensity. It is typically used in ambient light sensing applications in consumer electronic devices such as digital cameras, portable media players, and smartphones. It has a low power consumption, which makes it suitable for handheld and battery-operated devices. Additionally, the OPR5011T can be used in irradiance measurement applications as well.
Working Principle
The OPR5011T utilizes the Photoelectric Effect in order to detect light. The Photoelectric effect states that when light is incident on a metal surface, electrons are emitted from the surface. This phenomenon is better known as the Photoemission effect. In a photodiode, the photoemission effect is used to detect light intensity. When light is incident on the device, a current is generated in the device. This current is proportional to the intensity of the incident light. The OPR5011T has a wide range of sensitivity, which makes it suitable for a variety of applications.
Structure
The OPR5011T is similar to a conventional photodiode in structure. It consists of an anode and a cathode, which are connected to a small semiconductor element known as the p-n junction. This junction is the core of the device as it is responsible for the photoemission effect. The p-n junction is made up of a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a region with a deficiency of electrons, while the n-type semiconductor is a region with an excess of electrons. When light is incident on the p-n junction, the electrons in the n-type semiconductor are attracted to the p-type semiconductor, thereby creating a current.
Features
The OPR5011T has a number of features that make it a suitable choice for a variety of applications. Essentially, it is a high-sensitivity, low-power photo-diode that is capable of detecting low-intensity light in order to reduce power consumption. Additionally, it has a wide range of sensitivity and provides accurate readings. It also has a very low current dissipation which makes it suitable for low power applications. The OPR5011T can operate over a wide temperature range, ranging from -20 to 70°C, making it suitable for a diverse range of environments. Furthermore, its compact size makes it ideal for integration into consumer electronics.
Conclusion
The OPR5011T is a high-sensitivity, low-power photodiode widely used in consumer electronic devices. It utilizes the Photoelectric Effect in order to detect light intensity, and the current generated by the device is proportional to the intensity of the incident light. The device has a wide range of sensitivity and is capable of accurately measuring low-intensity light. Additionally, it has a wide operating temperature range and a compact size which makes it suitable for integration into consumer electronic devices.
The specific data is subject to PDF, and the above content is for reference
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