OPR5911

Optical Sensors - Photodiodes
The OPR5911 is an infrared-enhanced, reverse-biased, photodiode which is an active, passive optoelectronic device consisting of a junction between a heavily doped p-type semiconductor and a lightly doped n-type semiconductor. It can be made with a variety of structures that can be tailored to specific needs, depending on the operating wavelengths and the application. OPR5911 is particularly useful for light detection in the wavelength range of 850nm-1100nm because it has high responsivity at these wavelengths.

The OPR5911 is suitable for use in a range of applications, including energy, environment, security, automotive, consumer electronics, industrial, and medical equipment. They can be used in applications such as measuring light intensity (for instance, when used as an indicator that points to the photographer’s position), remote sensing of motion vectored paths, illumination sensing & switching (for example in lighting control systems), biometric identification, and optical communications. In addition, photodiodes materials in the family of OPR5911 can also be used as the light detector in many solid-state lasers.

Photodiodes convert light into electricity, using a reverse-biased semiconductor junction. Infrared light enters through the active surface and is absorbed in the n-type semiconductor, creating minority carriers. This generates a current between the p-type and the n-type contact. The current generated is proportional to the incident light intensity, and the generated current can be used to detect light and convert it into a voltage or other useful information.

To take advantage of the OPR5911’s high responsivity, it is important to efficiently match the incident light wavelengths to the OPR5911. When matching the OPR5911 with other system components such as a filter or lens, it is important to ensure that the brightness of the incident light, which includes reflections, is applied over the approximate 0.2 mm surface area of the OPR5911. In order to maximize the performance of the OPR5911, it is necessary to use the most suitable lens for the application, providing the most efficient passage of light. It is also important to ensure that the incident light follows a uniform pattern to cover the full area of the OPR5911 surface.

OPR5911 photodiodes have several advantages over other detectors, such as CCDs and phototransistors. They have very low dark current (the current resulting from no light being present on the active surface), very fast response time, and high electrical gain. OPR5911 also have high responsivity for infrared radiation at 850nm-1100nm and are unaffected by small temperature variations. Furthermore, since photodiodes are solid-state devices, they can be easily integrated into a device design, and they can be adapted to provide different levels of voltage outputs.

In addition, OPR5911 can be used in areas with extreme temperatures or in harsh environmental conditions. They are immune to strong electro-magnetic fields, and they can be used in any light-emitting devices without fear of damage or interference. Finally, OPR5911 photodiodes are a cost-effective solution for many applications and are available in standard packages as well as in custom configurations.

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OPR5011	TT Electroni...	--	4900	COMPARATOR OPTICAL 3 CHAN...
OPR5910	TT Electroni...	1.41 $	1000	PHOTODIODE SILICON PIN SM...
OPR5910T	TT Electroni...	1.58 $	1000	S.M. PHOTODIODE, TAPE & R...
OPR5913	TT Electroni...	8.54 $	1000	PHOTODIODE SILICON LG ARE...
OPR5915	TT Electroni...	0.0 $	1000	PHOTODIODE SILICON LG ARE...
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OPR5005TR	TT Electroni...	2.24 $	1000	SENSOR REFLECTIVEReflecti...
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