ORNTV50011002TF

Number of Pins:	8
Height - Seated (Max):	0.068" (1.73mm)
Size / Dimension:	0.194" L x 0.157" W (4.93mm x 3.99mm)
Supplier Device Package:	--
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Applications:	Voltage Divider (TCR Matched)
Operating Temperature:	-55°C ~ 125°C
Temperature Coefficient:	±25ppm/°C
Power Per Element:	100mW
Series:	ORNV
Resistor-Ratio-Drift:	±5 ppm/°C
Resistor Matching Ratio:	±0.05%
Number of Resistors:	5
Tolerance:	±0.1%
Resistance (Ohms):	5k, 10k
Circuit Type:	Voltage Divider
Part Status:	Active
Packaging:	Tape & Reel (TR)

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ORNTV50011002TF belongs to Resistor Networks, Arrays category. It is a type of resistor network using high-precision thin-film technology. It conceals circuits like potentiometers, complex filters, attenuators and other functions into a single component.ORNTV50011002TF is widely used in communication and broadcast frequency dividers, crystal osicllator balance network, signal measurement amplifiers along with the common pulse shaping, load balancing and noise elimination applications. It has high temperature stability, excellent thermal conductivity, low temperature coefficient, low temperature drift and high reliability.ORNTV50011002TF working principle is as follows. As shown in the figure, a resistor network consisting of an array of resistors connected in series is connected between the power supply and the ground or the circuit’s return line. When a voltage applied across the resistor network, it produces a corresponding current distribution; that is, a portion of the current will flow through each resistor. These currents interact with each other and form a resonance network. Through the voltage and current network, the resistance value and power gain can be adjusted to meet different circuit requirements.The main components of ORNTV50011002TF are the thin film resistor networks, such as precision chip resistors, poly-silicon resistors, thin-film multilayer resistors and thin-film resistors. The thin film resistor network provides more than just a simple length of resistance, but also provides circuitry with high frequency characteristics, dynamic resistance, higher thermal stability over wide temperature range, power usage, and a finer adjustment resolution.The poly-silicon resistors are formed using a combination of n- and p-type doped semiconductor slices deposited on the layer isolated inner bottom dielectric substrate. These diffused resistors are formed by doping the silicon slice with appropriate impurities to introduce inhomogeneous resistivity distribution. These resistors offer higher breakdown voltage, thermal stability and low temperature coefficient. Thin-film multilayer chips are created by depositing metal or dielectric layers on wafers, typically a combination of aluminum metal conductive elements, deposited on or within a dielectric medium for insulation. This type of resistor chip provides most resistance values, power ratings, and TCRs, with low temperature coefficient, high stability and accuracies in matching, and provide many features to help reduce noise and improve circuit performance. The chip can be manufactured with other high-frequency frequency characteristics, such as low inductance and high Q, to improve its performance even further.Thin-film resistors are constructed on an insulating substrate which is the body of a parallelogram, and by varying the width and length of the parallelogram, the change in resistance value is obtained. In this type of resistor chip, the substrate materials are of a variety, such as monocrystalline silicon, glass, ceramics, and various oxides of tantalum and silicon. ORNTV50011002TF is usually powered by a voltage or current source, which supplies the power to the resistor network. The power supply is typically adjusted with a trimming device, such as a potentiometer, which is used to control the voltage drop across the entire network. This regulating voltage helps to set an optimal resistance for the network, allowing for a better performance.In summary, ORNTV50011002TF is a type of resistor networks, arrays which uses thin-film technology combined with poly-silicon, multi-layered and thin-film resistors. Its main feature of use is high temperature stability, low temperature coefficient and excellent thermal conductivity. It is widely used in communication and broadcast frequency dividers, crystal osicllator balance network, signal measurement amplifiers, and pulse shaping, load balancing and noise elimination applications.

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