P0720SARP Allicdata Electronics
Allicdata Part #:

P0720SARPTR-ND

Manufacturer Part#:

P0720SARP

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: SIDACTOR 65V SURGE SUP SMD
More Detail: N/A
DataSheet: P0720SARP datasheetP0720SARP Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SIDACtor®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 4V
Current - Peak Pulse (8/20µs): 150A
Current - Peak Pulse (10/1000µs): 45A
Current - Hold (Ih): 150mA
Number of Elements: 1
Capacitance: 60pF
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Description

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Thyristors, commonly referred to as TVS, are a type of semiconductor device used primarily in the control and switching of electrical circuits. The P0720SARP is a thyristor designed to be used in high voltage applications. This paper will discuss the application field and working principle of the P0720SARP device.

The P0720SARP is a thyristor which can switch high voltages from 1000V to 6000V DC. It is suitable for incandescent lamps, arc lamps, resistive loads, as well as other high voltage applications. The device has a nominal working voltage of 2800V and its maximum working voltage is 6200V. The device also has a wide operating temperature range of -40°C to +85°C. Its surge current capability is standard at 20A and its rectangular rated current is 10A.

The P0720SARP has a simplistic design and construction. It consists of two layers of silicon with an internal PN junction. The first layer is a thick, heavily doped, n-type layer which forms the positive terminal. The second layer is a thin, lightly doped, p-type layer which forms the negative terminal. The thickness of this layer varies from 7-20 micrometres, depending on the device\'s power rating. At the middle of its structure, there is a metal-oxide-semiconductor field-effect transistor (MOSFET) which serves to regulate to current that passes through the thyristor.

The working principle of the P0720SARP is based on the physical properties of semiconductor materials. When the device is externally triggered, large electric fields are created which cause electrons and holes to move and recombine in the NPN junctions. This triggers a current flow which is regulated by the MOSFET. The device can be switched off by either reversing the polarity or reducing the triggering current below a certain level.

The P0720SARP is a conveniently packaged and highly reliable device. It offers high output power and works well in a range of operating conditions including a wide temperature range. The device is ideal for high voltage applications such as incandescent lamps, arc lamps, and resistive loads, among others. Its simple construction and principle of operation make it an attractive option for such applications.

The specific data is subject to PDF, and the above content is for reference

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