P4SMA8.2A R3G Allicdata Electronics

P4SMA8.2A R3G Circuit Protection

Allicdata Part #:

P4SMA8.2AR3G-ND

Manufacturer Part#:

P4SMA8.2A R3G

Price: $ 0.05
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 7.02V 12.1V DO214AC
More Detail: N/A
DataSheet: P4SMA8.2A R3G datasheetP4SMA8.2A R3G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100800 +: $ 0.04454
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Voltage - Clamping (Max) @ Ipp: 12.1V
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 34A
Series: P4SMA
Voltage - Breakdown (Min): 7.79V
Voltage - Reverse Standoff (Typ): 7.02V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes are used in a variety of applications, from military applications to consumer electronics. The P4SMA8.2A R3G is one such diode. This device is designed for use in medium-voltage and high current applications. In this article, we will discuss the application fields and working principle of the P4SMA8.2A R3G.

The P4SMA8.2A R3G is a medium voltage, high current, fast-response, three-element, avalanche-rated diode. It has a reverse breakdown voltage of 8.2V, a peak pulse current of 1000A, and a maximum clamping voltage of 12V. It is designed for use in applications such as automotive, telecommunications, consumer electronics, motor drives, and more. The diode can be used in applications with voltages up to 600V DC.

The P4SMA8.2A R3G is a three-element diode, which means that it has three distinct layers of p-type and n-type semiconductor material. The middle layer is the junction between the p-type and n-type materials. When the diode is forward-biased, a current flows through the p and n layers, and when it is reverse-biased, the current is blocked. The diode is avalanche rated, meaning that it is designed to survive high-voltage transients or surges.

The P4SMA8.2A R3G has a fast response time, making it suitable for use in applications where high current levels can spike rapidly. The device will clamp the voltage at a maximum of 12V for short-term surges, thereby protecting the circuit against damage from overvoltage. The device also has low capacitance, making it suitable for communications and motor control applications where high speed data transmissions are required.

The P4SMA8.2A R3G is a versatile TVS diode, suitable for use in a variety of medium and high voltage and high current applications. Its fast response time and high clamping voltage make it suitable for use in situations where protection against high voltage transients is required. Its low capacitance also makes it suitable for applications which require high speed data transmissions.

The specific data is subject to PDF, and the above content is for reference

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