
P4SMA82CAHR3G Circuit Protection |
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Allicdata Part #: | P4SMA82CAHR3G-ND |
Manufacturer Part#: |
P4SMA82CAHR3G |
Price: | $ 0.08 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | TVS DIODE 70.1V 113V DO214AC |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3600 +: | $ 0.07029 |
Voltage - Clamping (Max) @ Ipp: | 113V |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Current - Peak Pulse (10/1000µs): | 3.7A |
Series: | Automotive, AEC-Q101, P4SMA |
Voltage - Breakdown (Min): | 77.9V |
Voltage - Reverse Standoff (Typ): | 70.1V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS – Diodes are wide range of protection components, used to protect the circuits from the irregularities caused due to extreme ESD (electro-static discharge), EFT (electro-magnetic interference) and transient voltage fluctuations. One such Diode, the P4SMA82CAHR3G, is used for protecting various devices, from small consumer electronic devices to high-end industrial applications, for its excellent electrical functioning.
P4SMA82CAHR3G, a non-closure, planar standoff, bi-directional device, is mainly used in protecting protection device interface against transmission and switching noise, in telecom, industrial, and automotive applications. The device is designed to offer extremely low clamping voltage and low leakage during both slow and pulsed power functioning conditions. The operating temperature range from -55°C to 125°C makes the device suitable for high temperature operation. With an excellent transient protection capability, the P4SMA82CAHR3G can protect the connected device against lightning strikes, electro-static discharge, and voltage irregularities mentioned previously.
The working principle of the P4SMA82CAHR3G is mainly based on the breakdown mechanism applied in Zener diodes. The device is installed to rectify the high-voltage irregularity, such that the surge current is dissipated. This breakdown voltage is usually around 5.2V for the P4SMA82CAHR3G, which is slightly higher than the Zener breakdown voltage. As the device works on the avalanche breakdown mechanism, it is capable of sustaining the pulsed currents and switching noise due to its lower typical junction capacitance compared to a Zener diode
The device is capable of handling extreme over-voltage transients and surges. The type of the device is unilateral, which dissipates the induced surge current instantly, thus eliminating the chance of damage to the connected equipment. Due to its ultra low leakage and excellent clamping voltage levels, the device can provide protection for the connected circuit, against the over-voltage transients and spikes in a variety of application conditions like automotive, industrial, telecommunication and consumer electronics.
The P4SMA82CAHR3G is available in various packages sizings like 5mm and 7mm to offer easy device incorporation in applications or systems where space is a concern. The device is usually employed at both application interface entry points and at specific points of vulnerable circuit paths. The combination of both these points can offer improved protection to the connected system. The device is also highly compatible with printed circuit boards as the device package allows easy surface-mounted configurations.
Apart from its wide application range, the P4SMA82CAHR3G has other distinct advantages as well. The device is highly efficient andlong-lasting, compared to other protection devices. Moreover, the compact packaging, low reverse leakage capability, and superior transient clamping make it an ideal voltage surge protection device for any system.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
P4SMA30A | Bourns Inc. | -- | 1000 | TVS DIODE 25.6V 41.4V DO2... |
P4SMA62CA-E3/5A | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 53V 85V DO214AC |
P4SMA170CA-M3/61 | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 145V 234V DO214... |
P4SMA16CAHE3/5A | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
P4SMA18CAHE3/5A | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 15.3V 25.2V DO2... |
P4SMA540AHE3_A/H | Vishay Semic... | 0.14 $ | 1000 | TVS DIODE 459V 740V DO214... |
P4SMA180AHR3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 154V 246V DO214... |
P4SMA68AHR3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 58.1V 92V DO214... |
P4SMA15A | Bourns Inc. | -- | 5000 | TVS DIODE 12.8V 21.2V DO2... |
P4SMAJ60ADF-13 | Diodes Incor... | 0.07 $ | 1000 | TVS DIODE 60V 96.8V DFLAT |
P4SMA47CA | Littelfuse I... | 0.11 $ | 1000 | TVS DIODE 40.2V 64.8V DO2... |
P4SMA16AHE3/5A | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
P4SMA75 | Littelfuse I... | 0.1 $ | 1000 | TVS DIODE 64.1V 108.15V D... |
P4SMA18AHE3/5A | Vishay Semic... | 0.1 $ | 1000 | TVS DIODE 15.3V 25.2V DO2... |
P4SMA82CAHE3/61 | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 70.1V 113V DO21... |
P4SMA75A | Littelfuse I... | 0.11 $ | 1000 | TVS DIODE 64.1V 103V DO21... |
P4SMA30CAHE3/5A | Vishay Semic... | 0.11 $ | 7500 | TVS DIODE 25.6V 41.4V DO2... |
P4SMA51AHM2G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 43.6V 70.1V DO2... |
P4SMA110AHR3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 94V 152V DO214A... |
P4SMA30CA-E3/5A | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 25.6V 41.4V DO2... |
P4SMA56CAHE3/5A | Vishay Semic... | 0.09 $ | 1000 | TVS DIODE 47.8V 77V DO214... |
P4SMA16CA-E3/61 | Vishay Semic... | -- | 1800 | TVS DIODE 13.6V 22.5V DO2... |
P4SMA100 | Littelfuse I... | 0.1 $ | 1000 | TVS DIODE 85.5V 143.85V D... |
P4SMA24CAHM2G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
P4SMAJ17ADF-13 | Diodes Incor... | 0.07 $ | 1000 | TVS DIODE 17V 27.6V DFLAT |
P4SMA39AHR3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 33.3V 53.9V DO2... |
P4SMA33A M2G | Taiwan Semic... | 0.06 $ | 1000 | TVS DIODE 28.2V 45.7V DO2... |
P4SMA150CAHM2G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 128V 207V DO214... |
P4SMA36AHM2G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 30.8V 49.9V DO2... |
P4SMAJ11ADF-13 | Diodes Incor... | 0.07 $ | 1000 | TVS DIODE 11V 18.2V DFLAT |
P4SMA82CA-E3/5A | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 70.1V 113V DO21... |
P4SMA220CA-M3/5A | Vishay Semic... | 0.08 $ | 1000 | TVS DIODE 185V 328V DO214... |
P4SMA18CA R3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 15.3V 25.5V DO2... |
P4SMA540A-M3/61 | Vishay Semic... | 0.11 $ | 1000 | TVS DIODE 459V 740V DO214... |
P4SMA43CAHE3/61 | Vishay Semic... | 0.12 $ | 1000 | TVS DIODE 36.8V 59.3V DO2... |
P4SMAJ12ADF-13 | Diodes Incor... | 0.07 $ | 10000 | TVS DIODE 12V 19.9V DFLAT |
P4SMA12CA-M3/5A | Vishay Semic... | 0.07 $ | 1000 | TVS DIODE 10.2V 16.7V DO2... |
P4SMA24A R3G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 20.5V 33.2V DO2... |
P4SMA16CAHM2G | Taiwan Semic... | 0.07 $ | 1000 | TVS DIODE 13.6V 22.5V DO2... |
P4SMA27AHR3G | Taiwan Semic... | 0.08 $ | 1000 | TVS DIODE 23.1V 37.5V DO2... |
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