P4SMA75

Voltage - Clamping (Max) @ Ipp:	108.15V
Supplier Device Package:	DO-214AC (SMA)
Package / Case:	DO-214AC, SMA
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	4A
Series:	P4SMA
Voltage - Breakdown (Min):	67.74V
Voltage - Reverse Standoff (Typ):	64.1V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

P4SMA75 Application Field and Working Principle
P4SMA75 is a Thyristor Surge Suppressor Diode, a device in the family of Transient Voltage Suppression (TVS) protection diodes. Indeed, TVS diodes are used as over-voltage protection in a variety of electronic circuits, with TVS Diodes providing cost-effective surge protection solutions for applications ranging from consumer electronics to industrial control systems. The P4SMA75 surge suppressor diode is designed to protect equipment and components from high energy-induced transients. Specifically, the P4SMA75 protects against ESD, EFT, and Surge pulses. Electrical Fast Transient, or EFT, is a pulse of short-duration high-voltage transients that appears in the power line in pulsed electrical interference. These EFTs generally occur in single or multiple pulses of 8/20 μs duration and they must be avoided to ensure proper functioning of the electrical system. The P4SMA75 surge suppressor diode is designed to absorb these pulses and protect the system.Surge pulses are voltage transients that last for a longer period, in the range of one ms to more. P4SMA75 surge suppressor diode is designed to handle these surge pulses, as well. The P4SMA75, along with other TVS Diode devices, are designed to handle ESD, EFT, and Surge pulses while maintaining their DC blocking characteristics. The working principle of a TVS diode is based on the ‘avalanche break down effect’. When a voltage greater than the diode’s breakdown voltage is applied, the electric field at the diode junction increases and causes electrons to jump across the junction and create an avalanche current. This current then causes the diode to reach its avalanche breakdown voltage. The P4SMA75 surge suppressor diode has an avalanche breakdown voltage of 7.5 V. The aim of the design of TVS diodes is to maximize the current that can be handled while limiting the reverse leakage current of the device. This ensures that the device will not be damaged by the electrical over-voltage and reduces the risk of circuit malfunction. To conclude, the P4SMA75 is a Thyristor Surge Suppressor Diode designed to provide surge protection from ESD, EFT, and Surge pulses. It works by utilizing the avalanche breakdown effect when exposed to a voltage greater than its breakdown voltage, and by doing so allows the current to pass through the diode and protect the system from over-voltage damage. The P4SMA75 device is used in a variety of applications, from consumer electronics to industrial control systems, and it is a cost-effective solution for surge protection.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description