P4SMAJ10ADF-13 Allicdata Electronics
Allicdata Part #:

P4SMAJ10ADF-13DITR-ND

Manufacturer Part#:

P4SMAJ10ADF-13

Price: $ 0.07
Product Category:

Circuit Protection

Manufacturer: Diodes Incorporated
Short Description: TVS DIODE 10V 17V DFLAT
More Detail: N/A
DataSheet: P4SMAJ10ADF-13 datasheetP4SMAJ10ADF-13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS Compliant
10000 +: $ 0.06280
30000 +: $ 0.05761
50000 +: $ 0.05544
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Voltage - Clamping (Max) @ Ipp: 17V
Supplier Device Package: D-Flat
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 23.5A
Series: --
Voltage - Breakdown (Min): 11.1V
Voltage - Reverse Standoff (Typ): 10V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS - Diodes

Transient Voltage Suppression (TVS) Diodes are a family of semiconductor devices that are designed to provide protection from electrical overstress (EOS) conditions such as electrostatic discharge (ESD) or electrical fast transients (EFT) in sensitive electronic circuits. TVS Diodes are commonly used in a variety of applications including consumer electronics, automotive, industrial, and telecommunications.

P4SMAJ10ADF-13 Application Field and Working Principle

The P4SMAJ10ADF-13 is a bidirectional Transient Voltage Suppression (TVS) design optimized for use in high speed data interfaces. The device is encapsulated in a low profile SMB package which is suitable for automated mounting and the low thermal resistance facilitates reliable operation at high power dissipation levels. It is available in rated breakdown voltages from 13.2V up to 70V.

The P4SMAJ10ADF-13 TVS Diode is designed to protect two-wire interfaces such as Ethernet and USB. The bidirectional functionality of the device ensures protection in both positive and negative overvoltage conditions, while the high peak pulse power and low clamping voltage make it suitable for a wide range of applications. The low profile SMB package design is ideal for space constrained assemblies. The device also offers a low leakage current and is available in both ESD-protected and uni-polar versions.

The working principle of the P4SMAJ10ADF-13 TVS Diode is based on the Avalanche Breakdown effect. When an overvoltage appears on the anode or cathode pins of the device it causes electrons to accelerate and break down the junction barrier. This releases more electrons and holes into the junction which then combine to form an avalanche. The avalanche releases energy in the form of heat and light and consequently clamps the voltage to a safe level. The amount of current that the diode can handle is determined by its peak pulse power and clamping voltage ratings, which should be taken into consideration when selecting a device for a particular application.

The P4SMAJ10ADF-13 is a versatile TVS diode that can be used in a variety of applications. It is suitable for providing protection in high speed interfaces such as Ethernet, USB and a range of other two-wire connections. It is also suitable for use as an ESD protection in circuits where data integrity is paramount and a low profile is necessary. The device has a wide range of operating voltages and can handle high peak pulse powers, making it a suitable choice for a number of applications.

The specific data is subject to PDF, and the above content is for reference

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