P4SMAJ8.5ADF-13 Circuit Protection |
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Allicdata Part #: | P4SMAJ8.5ADF-13-ND |
Manufacturer Part#: |
P4SMAJ8.5ADF-13 |
Price: | $ 0.07 |
Product Category: | Circuit Protection |
Manufacturer: | Diodes Incorporated |
Short Description: | TVS DIODE 8.5V 14.4V DFLAT |
More Detail: | N/A |
DataSheet: | P4SMAJ8.5ADF-13 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS Compliant |
10000 +: | $ 0.06280 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 8.5V |
Voltage - Breakdown (Min): | 9.44V |
Voltage - Clamping (Max) @ Ipp: | 14.4V |
Current - Peak Pulse (10/1000µs): | 27.7A |
Power - Peak Pulse: | 400W |
Power Line Protection: | No |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | D-Flat |
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The P4SMAJ8.5ADF-13 is a surface mount transient voltage suppression (TVS) diode. It is designed to provide a high-level of protection over the range of 8.5 volts at a rated current of 55.0 Amps (Threshold Voltage 5.7 volts @ 55.0 A). The diode is ideal for a wide variety of applications where electrostatic discharge (ESD), electrical fast transients (EFT), and high surge current protection is needed.
The P4SMAJ8.5ADF-13 is composed of advanced nitride semiconductor technology which offers protection from ESD, EFT, and surge current. The diode is also designed with a low capacitance to provide superior transient current protection without degrading signal integrity. The P4SMAJ8.5ADF-13 is designed to protect against induced transients from ESD, EFT, or similar sources. It is designed with a high reliability and low capacitance, allowing for effective protection from lightning surges, ground faults, power cross, and over-voltage conditions.
The P4SMAJ8.5ADF-13 has three major components: the body, the bonding wires, and the terminal pins. The body consists of an epoxy resin that is used to provide protection from external mechanical and chemical stresses. The bonding wires provide electrical connection between the internal diodes and the terminal pins. The terminal pins are designed to provide electrical connection from the device to the printed circuit board (PCB).
The working principle of the P4SMAJ8.5ADF-13 is based on the Schottky diode structure. The Schottky diode is made of a thin layer of doped semiconductor material sandwiched between two metal layers. When the device is exposed to an electrical event, the metal layers form a shielding barrier to the doped semiconductor material. This barrier prevents the electrical signal from reaching the device’s internal components, resulting in the desired protective effect.
This TVS diode is suited to a wide variety of applications. It is suitable for use in automotive, marine, industrial, and consumer electronics systems. It is also suitable for use as an ESD, EFT, and surge current protection device in appliances, personal computers, modems, and other electronic equipment. In addition, the device is well suited for use as an ESD protection device in telephone systems and other communication networks.
In conclusion, the P4SMAJ8.5ADF-13 is a TVS-diode designed to provide protection from ESD, EFT, and surge current. It is ideal for use in a wide range of applications from automobiles, to appliances, to communication networks. The device is composed of advanced nitride semiconductor technology with low capacitance, and its working principle is based on the Schottky diode structure.
The specific data is subject to PDF, and the above content is for reference
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