P51-3000-S-N-D-4.5OV

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Pressure sensors, transducers, and transducers have a wide range of applications in industries ranging from aviation to automotive to medical. One of the most common types of pressure sensor is the P51-3000-S-N-D-4.5OV, a piezoresistive pressure sensor, which is a device that measures force or strain. This type of pressure sensor works on the principle of piezoresistivity, which is the change in electrical resistance caused by mechanical force applied to a semiconducting material.

The P51-3000-S-N-D-4.5OV consists of a MEMS (Micro Electro Mechanical Systems) pressure sensing element, an integrated circuit for signal conditioning, and a variety of packaging and mounting options. The pressure sensing element is a precision piezoresistive bridge composed of four piezoresistors that are thin film TiN films on top of a silicon MEMS platform. This bridge configuration enables the detector to respond to various pressures. The bridge is also designed to be highly linear, meaning that when there is no pressure applied, the bridge output is zero, and the bridge output will increase proportionally with any pressure applied. The signal conditioning circuit is designed to provide accurate, stable readings over a wide temperature range and also offers options for temperature compensation.

Applications for the P51-3000-S-N-D-4.5OV cover a broad range of industries. In aviation, it can be used to monitor the engine control systems of aircraft. Automobile manufacturers also use the sensor in on-board diagnostics systems to detect and monitor engine performance. In medical applications, the device can be used for patient monitoring or to measure respiration rate and blood pressure, among other things. The P51 also finds use in industrial process monitoring, navigation and military applications, where the precise measurement of pressure is essential.

The working principle of the P51-3000-S-N-D-4.5OV is based on the piezoresistive effect, which is the change in electrical resistance caused by mechanical force applied to a semiconducting material. When pressure is applied to the MEMS sensor, the resistance at each of the four thin film TiN contacts changes in order to modulate the bridge output. This is due to the piezoresistors’ characteristics which have a positive and a negative temperature coefficient, thus resulting in an output voltage that fluctuates with the pressure applied and gives an indication of the pressure applied.

The P51-3000-S-N-D-4.5OV is a reliable and accurate piezoresistive pressure sensor, capable of providing accurate measurements of pressure over a range of temperatures and in a wide range of applications. Its ease of integration, robustness, and affordability make it a popular choice for industries requiring precision pressure measurements. Its excellent linearity, sensitivity, and response time make it suitable for a variety of applications, providing accurate and reliable results for a variety of industries.

The specific data is subject to PDF, and the above content is for reference