P6KE170-B

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TVS diodes are used to protect electrical circuits from high-voltage transients and surges. The P6KE170-B is a bi-directional Transient Voltage Suppression (TVS) diode, designed to protect voltage sensitive components, such as microprocessors and other integrated circuits, from damaging overvoltage conditions. This device is intended for use as an efficient protection solution for overvoltage conditions, such as electrostatic discharges, lightning, and power cross in telecommunications, networking, and industrial equipment.

The P6KE170-B is a uni-directional diode with a maximum peak pulse current of 200A and a maximum reverse breakdown voltage of 170V. It has a fast response time of 0.3 nanoseconds, and a low capacitance of 0.27 pF. This diode is made of an ultra-low capacitance base substrate, which allows it to perform high-speed switching operations with its ultra-low capacitance. The device also provides high surge capability, and is available in a wide variety of package configurations, including SMA, SMB, and SOD-323, for convenient assembly.

The working principle of the P6KE170-B is based on the avalanche breakdown mechanism. Avalanche breakdown happens when an electric field creates a wave of free and scattered electrons in a semi-conductor material. This wave of electrons becomes increasingly rapid, and eventually reaches a point, where its velocity exceeds the escape velocity of the material. This phenomenon creates a large current surge, resulting in an avalanche breakdown.

The P6KE170-B is designed for applications including but not limited to telecom systems, networking and computing devices, industrial power systems, consumer electronics, and automotive systems. The device is well-suited for use with surge generator circuits, applications where EMI/RFI suppression is required, and any system where transient overvoltage protection is necessary.

In conclusion, the P6KE170-B is a bi-directional TVS diode designed to protect voltage-sensitive components from overvoltage conditions. This device has a maximum reverse breakdown voltage of 170V, a fast response time of 0.3 nanoseconds, and a low capacitance of 0.27 pF. The P6KE170-B is suitable for many applications, including telecom systems, networking and computing devices, industrial power systems, consumer electronics, and automotive systems.

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