PD3Z284C27-7

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Diodes - Zener - Single

PD3Z284C27-7 is a silicon epitaxial planar Zener diode. It features low series format for easier hand soldering. It has a Zener voltage between 25V and 32V with a low dynamic impedance. The device is perfect for protection circuits, surge absorption and voltage regulation, making it a highly reliable voltage regulator.

Application fields

PD3Z284C27-7 is designed for automotive, telecommunications and other low power circuits. An important application field of this device is the protection of integrated circuits and microprocessors, as it is capable of handling relatively high power and current. It also finds use in telecommunications, computing, and industrial control systems.

Working principle

The working principle of PD3Z284C27-7 is based on the Zener breakdown mechanism, wherein electrons are accelerated by the electric field from the conduction band to the valence band, leading to the formation of electron-hole pairs. These electron-hole pairs then form a conduction path and hence a current through the device. Due to the relatively low reverse breakdown voltage of this diode, it remains in forward bias and doesn’t enter the breakdown state. The current through the device is controlled by its series resistors.

Specifications

The PD3Z284C27-7 series has a maximum power dissipation of 250mW and a Voltage Range of 25V to 32V. It has a top position of 37 x 4.2mm physical size and a maximum reverse current of 1mA at 25V. The maximum DC forward current is 600mA and the storage temperature range is between -40°C and 150°C. The device has a maximum operating temperature of 150°C, a Zener current of 200uA, a response time of 40ms and a capacitance of 2.5pF.

Conclusion

To conclude, PD3Z284C27-7 is a silicon epitaxial planar Zener diode that features low series format for easier hand soldering. It finds application in the protection of integrated circuits and microprocessors, as well as in computing and industrial control systems. The device works based on the Zener breakdown mechanism, where electrons are accelerated by the electric field from the conduction band to the valence band, leading to the formation of electron-hole pairs. It has a Voltage Range of 25V to 32V with a maximum power dissipation of 250mW.

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