PDS3200-13 Discrete Semiconductor Products |
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Allicdata Part #: | PDS3200DITR-ND |
Manufacturer Part#: |
PDS3200-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 200V 3A POWERDI5 |
More Detail: | Diode Schottky 200V 3A Surface Mount PowerDI™ 5 |
DataSheet: | PDS3200-13 Datasheet/PDF |
Quantity: | 15000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 780mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | PDS3200 |
Description
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The PDS3200-13 is a silicon rectifier diode belonging to the Diodes - Rectifiers - Single family. It is a diode featuring low forward voltage drop, low reverse leakage current, low switching losses and high forward surge current capability. This diode is housed in a compact SOD-123 package type and is ideal for a wide range of applications, including switching power supplies and control circuits in consumer and industrial electronics, such as computers, home entertainment systems, telecommunications systems, and other consumer and industrial electronics. The PDS3200-13 has a maximum forward voltage drop of 1.3V and a maximum reverse leakage current of 1.0mA at 25°C. It has a maximum forward surge current of 4A, a power dissipation of 1.25W, and an operating temperature range of -55°C to 125°C. In addition, this diode has an operating junction temperature of up to 175°C, and a storage temperature range of -55°C to 150°C. The working principle of the PDS3200-13 diode is simple. A diode is a two-terminal device which conducts current in one direction but not in the other. This is due to the PN-junction formed between the two layers of semiconductor material, n-type and p-type. When a positive voltage is applied to the n-type material, the junction is forward biased and allows current to flow. When a negative voltage is applied, the junction is reverse biased and current flow is blocked. This flow of electrons is called conduction and is responsible for generating the flow of current. The PDS3200-13 diode is typically used in power supplies, voltage regulators, and switch-mode regulators. It can be used to convert AC input voltages into DC output voltages, as well as to regulate the input/output voltages of switch-mode regulators. It can also be used as a voltage clamp or an ESD protection device, to provide protection from electrostatic discharge. The PDS3200-13 diode is an ideal choice for a variety of applications, due to its low forward voltage drop, low reverse leakage current, low switching losses, high surge current capability and compact design. It is suitable for use in low power and medium power applications, and its small size allows it to be installed in cramped locations. In summary, the PDS3200-13 is a silicon rectifier diode belonging to the Diodes - Rectifiers - Single family, with a range of advantageous features including low forward voltage drop, low reverse leakage current, low switching losses and high forward surge current capability. It is highly suitable for controlling power supplies and switch-mode regulators and can also be used as a voltage clamp. Thanks to its small size, the PDS3200-13 diode is well suited for use in cramped locations and for low power and medium power applications.
The specific data is subject to PDF, and the above content is for reference
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