Allicdata Part #: | PDS835LDITR-ND |
Manufacturer Part#: |
PDS835L-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE SCHOTTKY 35V 8A POWERDI5 |
More Detail: | Diode Schottky 35V 8A Surface Mount PowerDI™ 5 |
DataSheet: | PDS835L-13 Datasheet/PDF |
Quantity: | 5000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 35V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 510mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1.4mA @ 35V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | PDS835 |
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The PDS835L-13 is a rectifier diode that is typically used in applications where single component and efficient switching is required. The diode is primarily used in circuit design for power conversion, AC-DC switching and rectification, and is often used in inverter and converter circuits as a robust and cost-effective alternative. As a high-voltage, low-power component, the PDS835L-13 can handle up to 15A at 650 volts, and it is suitable for standard power supplies, high-efficiency inverters and converters, and other industrial applications.
The PDS835L-13 is a short-circuit protected diode, meaning it is designed to protect itself and other components from damage due to a short circuit. The component is designed to reduce the voltage across its terminals and to prevent overvoltage. It also is designed to provide a stable level of resistance in order to maintain a consistent current flow. Its high voltage, low power characteristics make it ideal for controlling and regulating direct current, as it can handle up to 15A and 650V.
The PDS835L-13 utilizes a Schottky Barrier technique to achieve its effective switching, rectification, and conduction. Schottky Barrier rectifier diodes are made from a semiconductor junction between metals and graphene or a semiconductor material that allows for an enhanced range of electrical connection and is capable of handling high currents. This type of rectifier utilizes a thin metallic layer that forms an electrical barrier between the anode (positive) and the cathode (negative). The Schottky Barrier technique is a form of controlled reverse bias, meaning it allows a unidirectional current to pass through while blocking the reverse direction and providing greater levels of efficiency and stability. This allows the PDS835L-13 to efficiently convert alternating current (AC) to direct current (DC), while still providing effective switching, rectification, and conduction.
For effective use, the PDS835L-13 should be connected to a suitable circuit in order to ensure maximum performance. Typically, the circuit should contain rectifier diodes connected in series, allowing for effective current flow control. This reduces stress on the component and helps to prevent overvoltage. When using the PDS835L-13, it is important to observe proper electrical insulation and to use heat sinks, as the diode generates heat when in operation. It is also important to follow safety procedures and to use proper equipment for installation, as the component is designed for applications where high voltages and currents are present.
The PDS835L-13 is a reliable and cost-effective single rectifier diode designed specifically for high voltage, low power applications. With its short-circuit protection, Schottky Barrier technique, and effective current control, it is a versatile and dependable component for many industrial applications. As always, proper safety and maintenance should always be observed when dealing with high voltage and current components in order to ensure proper operation.
The specific data is subject to PDF, and the above content is for reference
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