PDZ4.3B,135 Allicdata Electronics
Allicdata Part #:

PDZ4.3B,135-ND

Manufacturer Part#:

PDZ4.3B,135

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 4.3V 400MW SOD323
More Detail: Zener Diode 4.3V 400mW ±2% Surface Mount SOD-323
DataSheet: PDZ4.3B,135 datasheetPDZ4.3B,135 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02043
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±2%
Power - Max: 400mW
Impedance (Max) (Zzt): 90 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: PDZ4V3
Description

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Diodes are electrical components consisting of two terminals, an anode and a cathode, that control the direction of current flow. Zener diodes are a type of diode with a low forward voltage drop and a high reverse breakdown voltage. The PDZ4.3B,135 is a single zener diode with a breakdown voltage of 4.3V and a power dissipation of 135 mW.

Overview

The PDZ4.3B,135 diode is a single zener diode manufactured by STMicroelectronics. It has a low forward voltage drop (VF) and a very high reverse breakdown voltage (BV). The breakdown voltage is 4.3 volts and the power dissipation is 135 mW. The package style for this diode is DO-7, and it is available in surface mount and through-hole versions.

Applications

The PDZ4.3B,135 diode is mainly used for overvoltage protection and voltage regulation applications. The high reverse breakdown voltage and the low forward voltage drop allow this diode to be used in various voltage level applications. It is also used for overvoltage protection, reducing noise in analog and digital systems and for ESD protection.

The PDZ4.3B,135 is designed to protect sensitive components such as power transistors, thyristors and SCRs. It can also be used as an indicator diode, displaying the presence of a voltage. This diode is suitable for a range of automotive and industrial applications, including battery chargers, switching power supplies, and lighting systems.

Working Principle

The PDZ4.3B,135 diode works on the principle of Zener breakdown. It is a diode that has a low forward voltage drop and a high reverse breakdown voltage. During forward biased conduction, the diode allows electrons to move freely from the anode to the cathode, resulting in a low voltage drop across the diode. Upon reverse biasing, electrons in the PN junction move away from each other, creating an electrical field. When this field reaches a certain maximum, it starts to cut off the normal conduction and begins to zap the electrons at the PN junction.

When this zapping reaches a certain level, it causes breakdown in the reverse direction, allowing a current to flow from the cathode to anode, this is known as Zener breakdown. This phenomenon allows the diode to have a high reverse breakdown voltage, but also allows a very low voltage drop in the forward direction.

Conclusion

The PDZ4.3B,135 is a single zener diode with a breakdown voltage of 4.3V and a power dissipation of 135 mW. It is mainly used for overvoltage protection and voltage regulation applications and is suitable for a range of automotive and industrial applications. It works on the principle of zener breakdown, which allows a very low voltage drop in the forward direction and a high reverse breakdown voltage. This makes the PDZ4.3B,135 a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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