Allicdata Part #: | 1727-5158-2-ND |
Manufacturer Part#: |
PDZ8.2B,115 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 8.2V 400MW SOD323 |
More Detail: | Zener Diode 8.2V 400mW ±2% Surface Mount SOD-323 |
DataSheet: | PDZ8.2B,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01838 |
6000 +: | $ 0.01658 |
15000 +: | $ 0.01442 |
30000 +: | $ 0.01298 |
75000 +: | $ 0.01154 |
150000 +: | $ 0.00961 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 8.2V |
Tolerance: | ±2% |
Power - Max: | 400mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 5V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
Base Part Number: | PDZ8V2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes, particularly Zener diodes, can be found in many different applications, such as satellite and radio transmission, computer circuits, communication equipment, and industrial applications. The PDZ8.2B,115 is a single Zener diode specially designed for power application. This diode is a silicon planar type with their characteristics made possible by diffused junctions and is configured to reduce the forward voltage drop and temperature dependence.
From a structural standpoint, the PDZ8.2B,115 consists of two zones, or regions. The first region comprises a heavily doped P-type semiconductor layer, while the second region is composed of a lightly doped N-type semiconductor layer. The two regions are separated from each other by the silicon interface layer, typically made from silicon dioxide. The P and N regions each have their own characteristics, which affect the behavior of the diode when it is subjected to different levels of voltage.
The Zener diode is designed to allow current to flow in only one direction, known as the forward direction. However, if a large enough reverse voltage is applied, the light P-type layer can become depleted, and current can flow in the reverse direction, known as reverse breakdown. This reverse breakdown occurs when the diode bends the electric field, essentially allowing the reverse current to flow through the diode in a highly accelerated fashion.
Once the reverse breakdown voltage is exceeded, the P-type region will be completely depleted of charge carriers. This causes the internal resistance of the diode to drop dramatically, allowing a large amount of current to pass through. The forward voltage is then responsible for providing the necessary amount of power needed to keep the current flowing in the diode. This phenomenon of limiting the current to a desired level is known as Zener voltage regulation.
The PDZ8.2B,115 offers a wide operating temperature range, making it ideal for industrial applications such as power supplies, heavy machinery and lithography equipment. The Zener Breakdown voltage of the diode is also adjustable, making it great for applications that need precise current regulation. Furthermore, the device is designed to be highly durable and reliable, with a maximum surge current of up to 5 amps and a long life of up to 2,000 hours.
In conclusion, the PDZ8.2B,115 is one of the most popular types of Zener diodes, thanks to its excellent performance in a variety of applications. It is specially designed for power applications, with adjustable Zener breakdown voltage, a wide operating temperature range and a durable and reliable operating life. All these qualities make the diode an excellent choice for industrial applications, ensuring optimal performance for multiple years.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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