PE42430MLAB-Z Allicdata Electronics

PE42430MLAB-Z RF/IF and RFID

Allicdata Part #:

1046-1063-2-ND

Manufacturer Part#:

PE42430MLAB-Z

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: pSemi
Short Description: IC RF SWITCH SP3T 50 OHM 8DFN
More Detail: RF Switch IC General Purpose SP3T 3GHz 50 Ohm 8-DF...
DataSheet: PE42430MLAB-Z datasheetPE42430MLAB-Z Datasheet/PDF
Quantity: 45000
Stock 45000Can Ship Immediately
Specifications
Series: UltraCMOS®, HaRP™
Packaging: Tape & Reel (TR) 
Part Status: Active
RF Type: General Purpose
Topology: Reflective
Circuit: SP3T
Frequency Range: 100MHz ~ 3GHz
Isolation: 30dB
Insertion Loss: 0.55dB
Test Frequency: 2.5GHz
P1dB: --
IIP3: 66dBm
Features: DC Blocked
Impedance: 50 Ohm
Voltage - Supply: --
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-DFN (1.5x1.5)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PE42430MLAB-Z belongs to the range of RF Switches and is designed for use in a wide variety of applications. It is designed to provide superior power handling capabilities, high isolation, low insertion loss, and fast switching speeds. It is suitable for use in automotive, consumer, aerospace, and communications applications.

The PE42430MLAB-Z is a compact, low-loss RF switch module designed for use in automotive, consumer, aerospace, and communications applications, which require robust RF performance combined with low power consumption. It features a typical isolation of 60 dB and low insertion loss, making it highly suitable for use in automotive, aerospace, and communications radio-frequency applications. The PE42430MLAB-Z delivers an exceptionally high isolation of 75 dB over a wide range of frequencies. It offers a low insertion loss of 0.3 dB, which is well suited for use in a wide variety of applications. Additionally, it offers fast switching speeds of less than 39 nanoseconds.

The working principle of the PE42430MLAB-Z is based on two distinct transistors integrated with metal-semiconductor field-effect-transistor (MESFET) technology. These two transistors are connected in series, allowing for higher power handling capabilities and higher isolation levels compared to conventional switching devices. Additionally, the two transistors are integrated with a high-speed low-capacitance diode, which enables faster switching speeds. The PE42430MLAB-Z is suitable for use in signal processing applications where low power consumption and low noise are of utmost importance.

The PE42430MLAB-Z is designed for use in a variety of applications, such as transmit/receive switching, broadcasting, navigation, radars, and manual switching. It is suitable for use in a variety of operating frequencies between DC and 6 GHz. Additionally, theSwitch is designed to withstand high temperatures of up to 150°C, making it suitable for automotive applications. The module also features reverse-bias protection, which preserves the longevity of the Switch and protects it from damage caused by electrostatic discharge.

In conclusion, the PE42430MLAB-Z is a high-performance RF switch module that is designed for use in a variety of applications that require low insertion loss and high isolation. It features fast switching speeds, low noise, and reverse-bias protection, making it well suited for applications in automotive, consumer, aerospace, and communications industries. Additionally, this RF switch module offers a high temperature range of up to 150°C, making it suitable for use in automotive applications.

The specific data is subject to PDF, and the above content is for reference

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