PEMZ7,315 Allicdata Electronics
Allicdata Part #:

PEMZ7,315-ND

Manufacturer Part#:

PEMZ7,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN/PNP 12V 0.5A SOT666
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 12V 500mA ...
DataSheet: PEMZ7,315 datasheetPEMZ7,315 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03797
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Power - Max: 300mW
Frequency - Transition: 420MHz, 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The PEMZ7,315 is a bipolar transistor that is part of the Transistors - Bipolar (BJT) - Arrays series. It is a dual-gate N-channel enhancement mode MOS-transistor with an integrated voltage regulator. Designed for digital signal processing, the device has a low on-state voltage drop, a high switching speed and an integrated reverse protection (EMF) protection circuit. It is also capable of performing a wide range of high speed digital logic operations, including logic gates, flash memory, and analog-to-digital conversion.

The PEMZ7,315 is a 3.2volt transistor that is capable of a wide range of speeds and has built-in reverse protection (EMF). It has an N-channel enhancement mode MOS-transistor with an integrated voltage regulator. It is capable of operating at an impressive speed of 1.2 nanoseconds. It is also capable of working at temperatures up to 175°C and in an Extended Temperature Range from -40°C to +150°C, with a maximum operating voltage of 2V.

The PEMZ7,315 application field is vast, and its working principles are as follows. It is ideal for a range of digital signal processing applications such as logic, memory, analog and security applications. Its fast switching speed makes it suitable for a range of digital logic operations. It is also suitable for flash memory, high-speed data transfer, computing, and analog-to-digital converter (ADC). Due to its low on-state voltage drop and reverse protection, it is suitable for use in high-voltage applications such as sensors, light emitting diode (LED), and power management integrated circuits (PMICs).

The PEMZ7,315 has a very effective working principle. When used in logic applications, it performs more effective logic operations than other transistors in its class. It can perform a range of logic operations such as logic gates, logic trees, memory and other complex logic operations. It also performs well in analog applications, and its low on-state voltage drop makes it ideal for high-voltage applications such as lighting control, motor control and power management.

In summary, the PEMZ7,315 is a well-regarded dual-gate N-channel enhancement mode MOS-transistor with an integrated voltage regulator that is suitable for a range of digital signal processing operations. It has a fast switching speed, low on-state voltage drop, and reverse protection. It is designed to perform a range of digital logic operations, flash memory, and analog-to-digital conversion, making it a versatile tool for a variety of digital applications. Its principles make it an excellent choice for applications such as high-voltage applications and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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