PF48F4000P0ZBQEF

Memory

PF48F4000P0ZBQEF Application field and Working Principle

PF48F4000P0ZBQEF is a type of static random access memory (SRAM) chips. It was developed by Fujitsu in 1998 and is a widely used type of SRAM for applications where the turnaround time and response time needs to remain low. It is widely used in industrial applications such as robotics, communication devices, datacom systems, memory systems, and power distribution control systems.

SRAM is a type of random access memory that works by storing bits of information in a set of cells that are connected to an address bus. Each cell is assigned an address, and once the address is known, an individual cell can be addressed and its contents retrieved with a single instruction. The address information is provided by the address bus, and the contents are read out of the individual cells. This allows SRAM to offer faster access speeds than other types of memory such as dynamic RAM, which has to retrieve each cell’s content by first writing the cell’s address to the RAM, then reading the contents at that address. This process takes longer than SRAM’s single instructions.

PF48F4000P0ZBQEF is a type of asynchronous SRAM, meaning that it operates without the need of any external clock signals to synchronize the internal operations. The PF48F4000P0ZBQEF chip consists of a total of 8K bytes of memory, organized as 4,096 words of 14 bits each. The chip has a typical read and write latency of 70ns, which is a significantly faster turnaround time than most other types of memory. The chip also has a target standby current of 10mA, and uses a 24.576MHz clock frequency for refreshing. All of these specifications make the chip well suited for applications requiring quick access times and low power consumption.

The operations of the PF48F4000P0ZBQEF are controlled through various control signals. Writes can be initiated by the Internal Write Enable (IWE) signal, and this is combined with the address on the address pins to write data to the specified memory address. The write data is provided to the data pins, and is then written to the specified address. Reads are initiated by the Internal Read Enable (IRE) and are also controlled by the address pins. The data read will be present on the Data Out pins.

The PF48F4000P0ZBQEF also has several control pins, which allow for external control of the chip’s operation. The Chip Select (CS) pin is a high-active signal that enables the chip for operation. The Chip Enable (CE) pin is used to select and enable the chip for internal operations. The Address Latch (AL) is used to synchronize the operations of the chip with the external address bus, and the Write Latch (WL) is used to synchronize the operations of the chip with the external write data. The Output Enable (OE) pin is used to enable the output signals from the chip, and the Data Out pins are used to output the read data.

The PF48F4000P0ZBQEF is a versatile static random access memory chip that is optimal for applications with low latency and low power requirements. Its asynchronous design, fast access times, and small form factor make it ideal for many types of industrial and commercial applications. As SRAM technology continues to evolve, the PF48F4000P0ZBQEF is a chip that will remain at the forefront of SRAM technology.