Allicdata Part #: | PF48F4400P0VBQEJ-ND |
Manufacturer Part#: |
PF48F4400P0VBQEJ |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 88SCSP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52... |
DataSheet: | PF48F4400P0VBQEJ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 100ns |
Base Part Number: | 48F4400P0 |
Supplier Device Package: | 88-SCSP (11x8) |
Package / Case: | 88-TFBGA, CSPBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 2 V |
Memory Interface: | Parallel |
Access Time: | 100ns |
Series: | Axcell™ |
Clock Frequency: | 52MHz |
Memory Size: | 512Mb (32M x 16) |
Technology: | FLASH - NOR |
Memory Format: | FLASH |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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Memory
PF48F4400P0VBQEJ is a device that belongs to the category of memory devices. It is a high speed, low voltage, 2.5 V Dual Data Rate DRAM that is used in a variety of applications. It has an integrated Phase-Locked Loop (PLL) and ECC protection.
Application Field
This type of memory device is widely used in a variety of applications, including computers, workstations, networking systems, embedded systems and many other devices. The memory device supports high data transfer rates, low power consumption and a wide range of operating temperatures. It also provides ECC protection for system integrity.
Working Principle
The PF48F4400P0VBQEJ memory device works using the Dual Data Rate (DDR) technology, which double the data rate of anest conventional SDRAM. It uses registered dual ported memory technique, which allow data to be transferred efficiently over different ports. This enables it to provide high data transfer rates and low latencies. The device also has an integrated Phase-Locked Loop (PLL) which allows it to operate at high frequencies and maintain its synchronization even when it is running at full speed.
The memory device utilizes ECC protection which helps to maintain stability and data integrity under various conditions. ECC protection works by detecting and correcting any errors that occur in the data. The memory device also uses a variety of error correcting codes in order to reduce the number of errors that occur, and to increase the amount of data that can be stored or transferred. This helps to improve the overall performance of the device.
The memory device utilizes Burst and Precharge Modes in order to maximize its performance. The Burst Mode enables it to transfer data at a much faster rate, while the Precharge Mode allows it to conserve power and re-charge its internal bank. This ensures that the device can always operate at its best.
The specific data is subject to PDF, and the above content is for reference
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