Allicdata Part #: | PFF2-ND |
Manufacturer Part#: |
PFF2 |
Price: | $ 2.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Semtech Corporation |
Short Description: | DIODE GEN PURP 200V 1.25A AXIAL |
More Detail: | Diode Standard 200V 1.25A Through Hole |
DataSheet: | PFF2 Datasheet/PDF |
Quantity: | 1000 |
336 +: | $ 1.82342 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1.25A |
Voltage - Forward (Vf) (Max) @ If: | 2.5V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 30pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -65°C ~ 175°C |
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A p-type FET (PFET), also known as a p-channel FET or simply pFET, is a specialized field-effect transistor (FET) used in various applications. It has a p-type gate, which is the main source of power supply, and is connected to the source, drain and an internal gate. When a small potential difference is applied to the gate to induce current, a current will flow from the source to the drain. By applying different gate potentials, the drain current and voltage can be adjusted, and the gain of the transistor can be changed.
PFETs are usually used in the manufacture of integrated circuits (ICs) and in the design of power management and voltage control circuits. This is because their characteristics provide improved performance compared to other types of FETs such as junction FETs (JFETs) and insulated gate bipolar transistors (IGBTs). The main advantages of PFETs are their fast switching speeds, excellent linear and power control performance, better electrostatic discharge (ESD) protection and immunity to electro-magnetic interference (EMI).
The working principle of PFETs is based on the application of an electric field between the source and drain. When the gate voltage is below the threshold voltage, the drain current to the pFET is negligible. When the gate voltage is increased above the threshold voltage, the electric field between the source and the drain is increased, allowing more current to flow. As the gate voltage is further increased, the drain current increases exponentially and eventually saturates when the gate voltage is equal to the drain voltage minus the threshold voltage.
PFETs are usually categorised into three types – depletion mode, enhancement mode and combination. Depletion mode PFETs operate with a positive gate bias and are usually used in low-temperature operations or high operating range applications such as low voltage regulator and power supply design. Enhancement mode PFETs operate with a negative gate bias and are usually used in high temperature and high operating range applications such as power control circuits, power switching design and power management.
Combination PFETs are transistors which combine the characteristics of depletion and enhancement mode devices. They use both positive and negative gate bias to switch on and off the drain current. This is beneficial in application areas such as voltage level shifters and high-frequency switching applications.
In summary, the PFET is a specialized field-effect transistor used in various applications. Its main advantages include fast switching speeds, excellent linear and power control performance, better ESD protection and immunity to EMI. It is categorised into three types – depletion mode, enhancement mode and combination. By understanding the working principle and application field of PFETs, designers can select the most suitable type for their system design.
The specific data is subject to PDF, and the above content is for reference
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