PGB1010402KR Circuit Protection |
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Allicdata Part #: | F2862TR-ND |
Manufacturer Part#: |
PGB1010402KR |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Littelfuse Inc. |
Short Description: | TVS DIODE 12V 250V 0402 |
More Detail: | N/A |
DataSheet: | PGB1010402KR Datasheet/PDF |
Quantity: | 80000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Voltage - Clamping (Max) @ Ipp: | 250V (Typ) |
Supplier Device Package: | 0402 |
Package / Case: | 0402 (1005 Metric) |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 125°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | -- |
Current - Peak Pulse (10/1000µs): | -- |
Series: | PulseGuard® PGB |
Voltage - Breakdown (Min): | -- |
Voltage - Reverse Standoff (Typ): | 12V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS (Transient Voltage Suppressor) diodes are a form of semiconductor device that is designed to protect electronic components from damaging high voltage transients that typically occur on power and signal lines. The PGB1010402KR is a particular diode in this range, that is used extensively in automotive and industrial applications.
The PGB1010402KR is a multi-layer design, featuring integrated protection against overvoltage, typically due to electrostatic facilities or other external events that cause the potential across a circuit to increase rapidly. The device contains a single chip composed of four interconnected MOSFETs, forming the core of a four diode array. The device integrates two diodes in a single package, providing increased protection and reliability.
The PGB1010402KR diode is designed to be used in high power, high speed power and signal lines, including automobile, industrial control, computer, and consumer electronics apps. With a nominal breakdown voltage of 4V and a maximum power rating of 1.2W, this diode offers high performance in a wide range of operating conditions. The device has a fast switching time of 4ns, allowing for high speed circuit protection.
The working principle of the PGB1010402KR consists of two stages. When the voltage across a circuit increases, the first stage, a parasitic diode, will be activated. When the voltage reaches the breakdown voltage, the diode will be fully turned on and start to conduct current. This will draw the voltage down to a safe level, protecting the electronic components from damage caused by high voltage transients. The second stage of the diode consists of a MOSFET transistor that helps to dissipate the excess energy that is generated when the diode is turned on.
The PGB1010402KR is designed to provide enhanced protection and reliability against high voltage transients. The device offers a wide range of operating voltages, fast switching times, and integrated protection, making it suitable for a wide range of automotive and industrial applications. The device is designed for use in high-power and high-speed power and signal lines, offering superior protection and reliability.
The specific data is subject to PDF, and the above content is for reference
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