PH2729-130M

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The PH2729-130M is a silicon NPN radio frequency (RF) bipolar junction transistor (BJT) used in a variety of commercial and consumer electronic applications. The device is specified for frequency operations up to 250 MHz, and it includes a low distortion internal bias circuit that provides enhanced linearity and improved device interoperability for small-signal RF power amplification applications. In addition, the PH2729-130M has an internal gold metalization system for improved thermal performance, resulting in superior power gain, high current gain, low noise figure, and good thermal stability.

The PH2729-130M is a general purpose NPN RF BJT with narrowband gain and high-frequency properties suitable for use in standard parameters such as gain, power output, linearity, thermal stability, and noise figure. It is fabricated using a coplanar gold metallization process to provide ultra-low distortion and improved RF performance in high-frequency applications. The package is designed to be compliant with European RoHS requirements and has a lead-free interior.

In addition to its general purpose RF applications, the PH2729-130M is suitable for low-voltage operation, making it well suited for use in miniature circuits where space and power consumption are of concern. This transistor may also be used in medium-power amplifiers and receivers in HF, VHF, and UHF bands, as well as low noise A/D converters, frequency multipliers, GaAs amplifiers, and FM/AM broadcast amplifiers.

In terms of working principle, the PH2729-130M is a three-terminal, N-type BJT device with an NPN structure. The N type terminals, called the Collector and Emitter terminals, are the main current-carrying electrodes. The third terminal, called the Base terminal, is the control element of the transistor. When voltage or current is applied to the Base terminal, it changes the conductivity of the Collector-Emitter current path and allows current to flow between the Collector and Emitter terminals. The relative amount of current that flows is determined by the amount of voltage or current applied to the Base terminal.

In summary, the PH2729-130M is a silicon NPN RF BJT with enhanced RF performance and low thermal distortion. It has a gold metallization process that provides low distortion and improvedRF performance in HF, VHF, and UHF bands. Its NPN structure allows for current to be controlled by a base terminal. It is ideal foruse in low-voltage circuits, medium-power amplifiers, receivers, and frequency multipliers, as well as A/D converters and GaAs amplifiers.

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