PH2729-25M

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	60V
Frequency - Transition:	--
Noise Figure (dB Typ @ f):	--
Gain:	9.2dB
Power - Max:	70W
DC Current Gain (hFE) (Min) @ Ic, Vce:	--
Current - Collector (Ic) (Max):	4A
Operating Temperature:	200°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	--
Supplier Device Package:	--

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PH2729-25M Application Field and Working Principle

The PH2729-25M is an NPN planar epitaxial transistor used for a variety of radio frequency (RF) applications. Specifically, it is intended for high gain, small-signal amplifiers up to 750MHz. This transistor has a high output power capability of up to 30dBm at a collector current of 100mA. It is also designed with state-of-the-art Bi-Directional Epitaxial Base technology, making it suitable for both linear and power amplifier applications. Additionally, the device is well-suited for use in 50 ohm systems. This transistor is made up of four terminals, the emitter, the collector, the base and the collector-base. It is a bipolar junction transistor (BJT) that operates by using two junctions of N-type and P-type semiconductor materials to control the flow of current. The transistor is inherent in that with a small base current the collector current can be amplified to a much larger amount. The two leads of the PH2729-25M are the base and the collector. The base lead is connected to the bias voltage, typically between 0.8V and 4V. The collector lead is connected to the load resistor, the value of which depends on the particular application. The emitter lead is connected to ground. The PH2729-25M is designed to provide good linearity over a wide range of input and output amplitudes. It offers good gain flatness and low noise. At the lower cutoff frequencies, the device can be operated in an AC coupled mode, where the DC offset currents are blocked and rapid circuit response can be achieved when a wide range of signals are being amplified.The PH2729-25M also features an internal bias network which provides automatic thermal stability. This facilitates excellent gain stability over a wide temperature range. The transistor also features improved performance at high frequencies due to its low-inductance packaging.The PH2729-25M is an excellent choice for a variety of radio frequency (RF) applications. It is especially useful for high gain, small-signal amplifiers up to 750MHz. Additionally, it is suitable for linear and power amplifier applications, with excellent gain flatness, low noise and wide frequency response. Its low-inductance packaging also makes it especially suitable for 50 ohm systems. Finally, its internal bias network provides automatic thermal stability, as well as excellent gain stability over a wide temperature range.

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