PHPT61002PYCLHX Allicdata Electronics

PHPT61002PYCLHX Discrete Semiconductor Products

Allicdata Part #:

1727-7492-2-ND

Manufacturer Part#:

PHPT61002PYCLHX

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PHPT61002PYCLH/SOT669/LFPAK
More Detail: Bipolar (BJT) Transistor PNP 100V 2A 125MHz 25W Su...
DataSheet: PHPT61002PYCLHX datasheetPHPT61002PYCLHX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.10002
3000 +: $ 0.09168
7500 +: $ 0.08613
10500 +: $ 0.08057
37500 +: $ 0.07409
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 10V
Power - Max: 25W
Frequency - Transition: 125MHz
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Description

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Transistors - Bipolar (BJT) - Single

The PHPT61002PYCLHX is a single bipolar junction transistor (BJT) specifically designed for use in a variety of applications.
BJTs have three terminals known as the emitter, bse, and collector. They are current-controlled devices that are capable of amplifying or switching signals and can be used in digital or analog applications.
The PHPT61002PYCLHX is a small-signal NPN BJT. It has an 500mW power dissipation rating and a maximum DC current gain of 250. It has an operating temperature range from -65°C to +150°C and requires a collector-emitter voltage of 30V. The transistor has a high voltage handling capability and is capable of operation up to 175V for certain specifications.

Working principle

The working principle of a BJT is based on the interaction of the electrons and holes in a semiconductor material such as silicon or germanium. An n-type semiconductor has free electrons while a p-type has free holes. The “junction” in the name refers to the junction between these two types of materials. When an electric field is applied to the junction, the electrons are drawn to the holes and vice versa. This creates a current that can be used to amplify or switch a signal.

In an NPN BJT, a small voltage applied to the base terminal causes current to flow from the emitter to the collector. As the current increases, the voltage drop across the collector-emitter junction increases. This causes a voltage drop across the base-emitter junction, resulting in a decrease in current. This feedback ensures that the current can be controlled by changing the base voltage. This process is known as current gain.

Application field

The PHPT61002PYCLHX is suitable for use in a variety of applications due to its high voltage handling capability and large power dissipation rating. Some of the applications the PHPT61002PYCLHX can be used for include:

  • Resonant switching inverters.
  • DC-DC converters.
  • DC motor controls.
  • Light dimmers.
  • Analog amplifiers.
  • Logic and interface circuits.

The PHPT61002PYCLHX is also suitable for use in a high-temperature environment such as surface mount devices (SMD).

Conclusion

The PHPT61002PYCLHX is a NPN bipolar junction transistor (BJT) capable of operating at high voltages and large power ratings. It is suitable for a variety of applications, from resonant switchers to analog amplifiers. The working principle is based on the principle of current gain, which allows the device to be controlled by changing the base voltage. The PHPT61002PYCLHX is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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