PMEG1020EV,115 Allicdata Electronics
Allicdata Part #:

1727-5338-2-ND

Manufacturer Part#:

PMEG1020EV,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE SCHOTTKY 10V 2A SOT666
More Detail: Diode Schottky 10V 2A (DC) Surface Mount SOT-666
DataSheet: PMEG1020EV,115 datasheetPMEG1020EV,115 Datasheet/PDF
Quantity: 4000
4000 +: $ 0.04990
8000 +: $ 0.04491
12000 +: $ 0.03992
28000 +: $ 0.03742
Stock 4000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 460mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 3mA @ 10V
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Operating Temperature - Junction: 150°C (Max)
Base Part Number: PMEG1020
Description

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PMEG1020EV,115 Application Field and Working Principle

Diodes-Rectifiers-Single, also known as Rectifier Diodes or Silicon Diodes, are semiconductor devices that are made to conduct current in one direction easily and avoid the current from flowing in the opposite direction. The PMEG1020EV,115 Rectifier Diode is one type of diode, developed to accommodate high power applications. This article will explain its application field, working principle, characteristics and specifications.

Application Field

PMEG1020EV,115 Rectifier Diodes are ideal for various applications, such as switching power supplies, battery charging and DC motors. This diode is specifically designed for automotive applications. Its low current reverse leakage and low forward voltage drop can effectively reduce losses in electronics circuits. Additionally, the robust and reliable design is suitable for automotive and industrial power supplies, as well as high power DC/DC converters.

Working Principle

Briefly, rectifier diodes operate by allowing current to flow in one direction only. This is due to a lack of mobile electrons in the p-type region, creating an electric field at the junction, which effectively prevents current from flowing in the opposite direction. In the case of the PMEG1020EV,115 Rectifier Diode, the p-type region is made from silicon, while the n-type region is made from germanium. This ensures a higher forward voltage drop than found in other rectifier diodes. Additionally, it has a low reverse current leakage to prevent excessive current from flowing in the reverse direction, thus helping to protect circuitry.

Characteristics and Specifications

The PMEG1020EV,115 Rectifier Diode has a maximum reverse voltage of 115V, and a maximum forward current of 10A. It is capable of a maximum reverse current of 5uA, and a maximum forward voltage of 1.3V. Furthermore, this diode has a high temperature operating range of -55°C to + 175°C, which makes it suitable for harsh industrial environments. In terms of mechanical durability, the PMEG1020EV,115 Rectifier Diode has excellent solderability and is capable of withstanding 2000 thermal cycles. Furthermore, this diode has a maximum power dissipation of 20W and a minimum breakdown voltage of 75V.

Conclusion

In conclusion, the PMEG1020EV,115 Rectifier Diode is designed for high power applications, especially for automotive use. It has a low forward voltage drop, a low reverse current leakage, and an excellent operating temperature range. Additionally, this diode is able to withstand 2000 thermal cycles and has a maximum power dissipation of 20W. All these properties make PMEG1020EV,115 Rectifier Diodes suitable for various industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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