PMEG2010AEBF Allicdata Electronics
Allicdata Part #:

PMEG2010AEBF-ND

Manufacturer Part#:

PMEG2010AEBF

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE SCHOTTKY 20V 1A SOD523
More Detail: Diode Schottky 20V 1A (DC) Surface Mount SOD-523
DataSheet: PMEG2010AEBF datasheetPMEG2010AEBF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.06110
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 620mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1.5mA @ 20V
Capacitance @ Vr, F: 19pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)
Description

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PMEG2010AEBF Application Field and Working Principle

As a member of the family of Diodes-Rectifiers-Single, the PMEG2010AEBF is a medium power Schottky barrier rectifier. The PMEG2010AEBF rectifier is used in a wide variety of applications such as automotive, consumer electronics, LED lighting systems, and other power conversion projects. It exhibits low forward voltage drop and fast switching speed, combined with low thermal resistance for excellent thermal performance. This device has the advantage of very low reverse leakage current due to the Schottky diode process.

External Characteristics of the PMEG2010AEBF
The PMEG2010AEBF has a low forward voltage drop of only 0.15 V, as well as a fast switching speed of 5 nanoseconds, as compared to other Schottky barrier diodes. It also has a low thermal resistance of 2.2 degrees Celsius per watt, making it suitable for applications that require high power dissipation. In addition, the device has a reverse leakage current of only 10μA at 25°C, so it does not require a large heat sink for efficient operation.

Internal Characteristics of the PMEG2010AEBF
The PMEG2010AEBF is built using an avalanche process, which gives it the ability to handle high voltages and currents without suffering from catastrophic failure. The device is also built with a high-speed diode die which helps to reduce forward voltage drop, as well as improving switching speed. Finally, the device is rated for up to 3 A of continuous current, and a pulse current rating of 6 A.

Working Principle of the PMEG2010AEBF
The working principle of the PMEG2010AEBF is based on the standard diode rectification process. In rectification, the diode allows current to flow in one direction and blocks current flow in the other direction. The diode acts as a switch, allowing current to flow through it only when the correct polarity is applied. In the PMEG2010AEBF device, the Schottky barrier rectifier is used instead of a standard diode, resulting in lower forward voltage drop and faster switching speeds.

Applications of the PMEG2010AEBF
The PMEG2010AEBF can be used in a number of applications, including automotive, consumer electronics, LED lighting systems, and other power conversion projects. Due to its low forward voltage drop and fast switching speed, it can be used in high current applications such as motors, relays, power supplies, and power management systems.

The PMEG2010AEBF is an invaluable device for any application that requires high power performance combined with low forward voltage drop and fast switching speed. It is easy to use and provides excellent thermal performance and low reverse leakage current due to the Schottky diode process. This makes it a great choice for any power conversion project.

The specific data is subject to PDF, and the above content is for reference

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