PN2369 Allicdata Electronics
Allicdata Part #:

PN2369-ND

Manufacturer Part#:

PN2369

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 15V 0.2A TO92
More Detail: Bipolar (BJT) Transistor NPN 15V 200mA 350mW Thro...
DataSheet: PN2369 datasheetPN2369 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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PN2369 is a single bipolar transistor (BJT). It is mainly used in low- to medium-power signal applications. It is a switching device and is used in many radio frequency (RF) circuits as an amplifier. This paper will discuss the application fields of PN2369 and its working principle.

The PN2369 is mainly used in amplifier, pre-amplifier, switching, power amplifier (PA) and mixer designs in RF circuits. It has very low C_bb and C_eb capacitances and therefore can be used for high-frequency applications. It has a wide range of supply voltages between 4V and 25V and can handle currents up to 100mA.

PN2369 is used in many radio frequency applications such as HF transmitters, RF amplifiers and oscillator circuits, HF receivers, IF amplifiers and oscillators, pre-amplifiers, FM modulators and demodulators.

PN2369 is a current-controlled device with a common-base configuration. It has a positive bias voltage connected to its base electrode, which induces a collector current. This collector current provides enough voltage to drive the base current of the transistor. When the current is increased, the base current increases, which further increases the collector current. This increased collector current, in turn, drives the base current up again, which further increases the collector current. This process is known as gain and is responsible for producing amplification.

The PN2369 is characterized by its voltage gain, collector current, power dissipation, and junction temperature. Its voltage gain is between 7 and 10, its collector current is between 100mA and 500mA, its power dissipation is between 0.7W and 1W, and its junction temperature is between 125°C and 150°C.

The PN2369 works on the principle of minority carrier injection. It is based on a P-type semiconductor substrate and has N-type emitter and base regions. A current is injected from the emitter into the base region of the P-type substrate. This current gives rise to minority carriers which travel to the collector region. The collector then amplifies the current due to the movement of the minority carriers, which produces an amplified output.

PN2369 is an excellent choice for many low to medium power signal applications. Its small size and low power dissipation make it ideal for use in these applications. It is also a very versatile device and can be used in many different circuits. Its high-frequency operations, large current capacity and wide range of supply voltages make it suitable for many radio frequency applications such as amplifiers, pre-amplifiers, mixers, and modulators/demodulators.

The specific data is subject to PDF, and the above content is for reference

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