PN2484_D74Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PN2484_D74Z transistor is a type of single bipolar junction transistors (BJT). It is a high-voltage transistor with a maximum power dissipation of 500 mW, a total gain of 140 at 10 V, and an operating frequency of up to 200 MHz. This BJT can be used for a wide variety of applications, such as audio amplifiers, signal processing, and signal switching.

The PN2484_D74Z uses an NPN type transistor, composed of three layers of semiconductor material. The three layers are the emitter, collector, and base. The emitter layer is the negatively charged terminal, while the collector layer is the positively charged terminal. The base is what allows current to flow between the emitter and collector layers. This is done by creating an electric field between them, through which electrons can flow. The base is controlled by the applied voltage, current, and the base-emitter voltage, allowing the amount of current flow through the transistor to be regulated.

For the PN2484_D74Z, the collector-emitter voltage is 500 mV, and the base-emitter voltage is 2 Volts. The base current and collector current are both 10 mA. With these values, the transistor can withstand a maximum power dissipation up to 500 mW, with a total gain of 140 at 10 V. Furthermore, the operating frequency of this BJT is up to 200 MHz.

The PN2484_D74Z can be used for a wide variety of applications, such as audio amplifiers, signal processing, signal switching, and even voltage regulators. In audio amplifiers, it can be used to boost audio signals and increase the volume while keeping the signal distortion to a minimum. In signal processing, it can be used as a signal switch, allowing signals to be routed to the right place in the circuit. Finally, in voltage regulators, it can be used to regulate the input voltage and keep it within a certain range.

In conclusion, the PN2484_D74Z is a high-voltage single bipolar junction transistor (BJT) used for a variety of applications. It has a maximum power dissipation of 500 mW, a total gain of 140 at 10 V, and an operating frequency of up to 200 MHz. It has a collector-emitter voltage of 500 mV, and a base-emitter voltage of 2 Volts, allowing for a wide range of applications. It can be used for audio amplifiers, signal processing, signal switching, and even voltage regulators.

The specific data is subject to PDF, and the above content is for reference