Allicdata Part #: | 568-1177-2-ND |
Manufacturer Part#: |
PRF957,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANSISTOR SOT323 |
More Detail: | RF Transistor NPN 10V 100mA 8.5GHz 270mW Surface M... |
DataSheet: | PRF957,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 8.5GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 270mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 6V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | PRF957 |
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The PRF957,115 is a higher-level type of transistor that is used for RF (radio frequency) applications, due to its ability to amplify and control signals. In addition, the PRF957,115 can also provide higher levels of power transfer and other related functions. The transistor is a type of bipolar junction transistor (BJT). As opposed to other types of transistors, this type of BJT has two distinct operating regions, the active and the saturate, which allow it to be used in more precise and sensitive applications. Thus, the transistor is especially suited to RF applications that require precise signal manipulation and power transfer control.
The PRF957,115 is composed of two elements that combine to form a three-layer device. The first element consists of a collector and emitter made of Silicon and Germanium, respectively. The Silicon serves as the semiconductor material and the Germanium is used for the contact. The second element consists of a semiconductor base that serves as an insulator between the collector and emitter. The base material is usually made from Cadmium or Aluminum.
The operating principle of the PRF957,115 transistor is based on the combination of the collector and emitter as well as the base material. In the active or forward-bias region, when a voltage is applied across the collector and emitter, the base voltage then creates an electric field that charges the collector and emitter. This, in turn, creates a current flow through the transistor that allows it to act as an amplifier. On the other hand, in the saturate or reverse-bias region, a lower voltage is applied to the base material and the collector and emitter are not charged, thus allowing it to act as a switch.
The PRF957,115 transistor is also commonly used in high-frequency applications. At higher frequencies, the transistor needs to be able to react quickly and accurately in order to avoid errors. For example, it may be used in radios, cell phones, and other wireless communication systems. The transistor is also used in high-speed data communications such as Wi-Fi and cellular networks, as well as high-speed digital-to-analog conversion systems. Additionally, it is also found in audio amplifiers and high-speed integrated circuits.
The PRF957,115 transistor is most commonly used in applications that require accurate signal manipulation and power transfer control, as well as in high-frequency and high-speed applications that require a high level of precision. Therefore, it is an invaluable component for a wide range of applications, from cell phones to digital-to-analog conversion systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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