PV72W20-39PX

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The PV72W20-39PX are a series of transistors used for power amplification in the audio and radio industries. As a power transistor, the PV72W20-39PX has a significantly higher voltage, current, and power handling capacity than its predecessors. The PV72W20-39PX can be utilized in a wide variety of audio and radio equipment and are ideal for use in power amplifier applications.

The PV72W20-39PX consists of n-channel enhancement mode double-diffused MOSFETs. The device has two source terminals to allow easy connection with many of the power supplies found in today’s electronics. The PV72W20-39PX is designed to operate in a temperature range of -55°C to +125°C, making it ideal for a wide array of applications.

The device is capable of providing superior performance in audio power amplifier and radio applications. It is designed to produce maximum power output and low noise. It is capable of dissipating power up to 1.8 watts, with up to 24 watts of dynamic power available. The PV72W20-39PX is an excellent choice for high-power amplifiers and other audio equipment.

The device has a large tolerance to high voltages, high current, and high temperatures, allowing it to deliver reliable performance in a variety of electrically demanding environments. It is able to supply current levels up to 600mA and can support up to forty volts. The PV72W20-39PX is designed to operate at up to fifty-five percent of its rated power, even when the device is heated up to its rated temperature.

The PV72W20-39PX is also one of the most efficient power MOSFETs available in today’s market. Its extremely low thermal resistance and high current rating make the device ideal for applications where high quantities of power are required in a smaller package. The device was designed for use in the smallest possible packages, allowing for higher levels of integration and lower component cost.

The working principle of the PV72W20-39PX is based on the MOSFET principle. The MOSFETs are constructed using thin layers of oxide and doped silicon controlled rectifiers. The oxide layers act as the gate in a MOSFET circuit. When a positive voltage is applied to the gate, the channel of the MOSFET will open up and allow current to flow. When the voltage to the gate is removed, the channel will close and no current will flow.

The PV72W20-39PX is an ideal device for power amplification applications owing to its high voltage, current, and power handling capacities. It is also a relatively low cost device, making it an excellent choice for many cost-sensitive projects. The low thermal resistance and high current rating make the device ideal for a wide range of applications, from consumer electronics to professional audio equipment. The device is also able to provide high levels of dynamic power and low noise in a compact package.

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