PXTA42,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5394-2-ND |
Manufacturer Part#: |
PXTA42,115 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN 300V 0.1A SOT89 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 1.3W... |
DataSheet: | PXTA42,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.12887 |
2000 +: | $ 0.11750 |
5000 +: | $ 0.10992 |
10000 +: | $ 0.10234 |
25000 +: | $ 0.10108 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
Power - Max: | 1.3W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | PXTA42 |
Description
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PXTA42,115 Application Field and Working Principle
Introduction
The PXTA42,115 is a high-performance single-bipolar transistor manufactured for general-purpose and switching applications. Manufactured in either a TO-92 C, D, E or P package the PXTA42,115 features a maximum collector current of 150mA and a maximum power dissipation of 175mW. The forward voltage is 1.3V and the reverse voltage is 20V. Application Field of PXTA42,115
The PXTA42,115 is an ideal transistor for a variety of general-purpose and switching applications including fan control, level shifting, interstage coupling and signal circuit amplifying. It is suitable for circuits operating at low or medium speeds and voltages, and for use as power switches for low power circuits, such as batteries and portable devices, because of its low collector current and power dissipation. Working Principle of PXTA42,115
The PXTA42,115 is a bipolar junction transistor and operates in a three-terminal junction, with the gate (base) connecting to the emitter and the collector connecting to the emitter. A small electric current applied to the base results in a relatively larger current flowing through the collector and the emitter. This is the difference between a BJT and other semiconductor devices since other devices do not rely on a physical control of low current. When the base-emitter junction is forward biased and a proper voltage is connected to the collector, the electron current from the emitter to the collector increases exponentially and forms a current amplification element. Because of this trend, BJTs are used for analog applications, such as amplifying signals.The PXTA42,115 also has a low-power/low-frequency ratio, making it ideal for applications that use low voltage, such as battery-powered applications.Conclusion
The PXTA42,115 is a high-performance single-bipolar transistor manufactured for general-purpose and switching applications. It is suitable for circuits operating at low or medium speeds and voltages, and for use as power switches for low power circuits, such as batteries and portable devices, because of its low collector current and power dissipation. The PXTA42,115 features a maximum collector current of 150mA and a maximum power dissipation of 175mW. Because of this, it is an ideal transistor for a variety of general-purpose and switching applications including fan control, level shifting, interstage coupling and signal circuit amplifying.The specific data is subject to PDF, and the above content is for reference
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