Allicdata Part #: | PZT4401/ZLX-ND |
Manufacturer Part#: |
PZT4401/ZLX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | SWITCHING TRANSISTOR |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 1.15... |
DataSheet: | PZT4401/ZLX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 1V |
Power - Max: | 1.15W |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SC-73 |
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.PZT4401/ZLX Application Field and Working Principle
PZT4401/ZLX is a type of single bipolar junction transistors (likely also known as an BJT) which is a type of transistor consisting of three metal-oxide-semiconductor structures that are used to form a semiconductor junction. The metal-oxide-semiconductor structures of this type of transistor allow it to be used in different types of applications such as amplifying signals and switching electrical signals.
In its simplest form, a PZT4401/ZLX bipolar junction transistor consists of two n-type layers separated by a p-type layer. Each of the n-type and p-type layers have doped regions in which the doping these regions is done to increase the number of available electrons for conduction in the p-type layer, or to increase the number of holes for conduction in the n-type layers. The junction formed by the three layers is called a base-collector-emitter region.
In an application field, the principal operation of a PZT4401/ZLX BJT can be explained as follows. When a small current is applied to the base (or control) region, a larger current flows from the collector to the emitter. This occurs due to the higher mobility of electrons in n-type layers compared to the mobility (concentration) of holes in p-type layers. When the applied current flows through the base, the electrons in the n-type layers and the holes in the p-type layers combine to produce a higher current flowing between the collector and the emitter. This larger current can then be used to amplify a signal moving plate-to-plate in the PZT4401/ZLX.
Due to the properties of a single bipolar junction transistor, they are capable of amplifying signals in multiple ways and making switches. In both cases, a small change in the voltage to the base region of the PZT4401/ZLX BJT will result in a large change in the current flowing between the collector and the emitter. This amplifying or switching action can be used for a wide range of applications, including amplifying or switching of radio signals, high voltage power grids and audio systems.
Aside from its broad application, PZT4401/ZLX BJT also has other advantages that make it preferable over other semiconductor components. Firstly, it is incredibly compact which leads to a reduction in the size of the circuit board that it is used on. It is also capable of dissipating relatively large currents, as well as operating at very high voltages. Therefore, it is highly suitable for wide range of uses including amplifiers and power supplies.
The capabilities of this type of BJT makes it an ideal choice for a number of applications, either as an amplifier or as a switch. It is also widely used in consumer electronics and various other products due to its compact size and its ability to dissipate large currents at very high voltages. Due to its broad application field and its advantages over other types of transistors, the PZT4401/ZLX BJT is very popular in the electronics and electrical industry.
The specific data is subject to PDF, and the above content is for reference
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