PZT651T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 1A, 2V
Power - Max:	800mW
Frequency - Transition:	75MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	PZT651

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PZT651T1G is a type of Single Bipolar Junction Transistor commonly used in amplifiers and oscillators. Bipolar junction transistors (BJT) are three-terminal active devices composed of three semiconductor layers that can be used for voltage amplification and signal switching between two distinguishable input and output signals. The PZT651T1G works by using the current flowing between the base-emitter junction of the transistor and a reverse bias voltage applied to the base-collector junction. This current flow causes a voltage drop across the transistor and amplifies the input signal.The PZT651T1G is specifically designed for use in high frequency amplifiers and oscillators. Its design includes a low distortion factor, which makes it an ideal choice for precision applications. It is also a low-cost alternative compared to other similar transistors, making it an attractive option for many designs. Moreover, its performance remains stable over a wide area of operation, and its maximum power dissipation of 300 mW gives it an extended life span.The PZT651T1G has several advantages over other types of BJT transistors, including its small size and high power efficiency. In order to further optimize its performance, the PZT651T1G includes an integrated temperature compensation circuit, which helps maintain its operating parameters at a stable level. This ensures that the transistor works without any variation in its performance due to temperature changes. Moreover, its high reverse bias withstanding capability, coupled with its fast switching speed, makes it ideal for use in high-frequency applications.In terms of its working principle, the PZT651T1G uses a voltage applied to the base-collector junction to create an electronic mount that controls the current flowing between the base-emitter junction. This current is then amplified and converted into a higher current that can be used to control other devices or circuits. Due to its small size, the PZT651T1G can be used for amplifying very small signals as well.The PZT651T1G can also be used for switching purposes. When the voltage applied to the base-collector junction is increased, the base-emitter junction produces a larger current, and this larger current in turn switches the transistor on. When the input voltage is decreased, the base-emitter junction produces a smaller current, and the transistor switches off. This makes the PZT651T1G ideal for applications where the device needs to be switched on and off quickly in response to a given input signal.The PZT651T1G is one of the most widely used transistors due to its numerous benefits. It is an efficient, low-cost, and reliable device that offers excellent performance in applications requiring both high-frequency amplification and switching. Its integrated temperature compensation circuit ensures its operation under stable conditions, and its high power dissipation allows it to have a long lifetime. Finally, its small size makes it well suited for a variety of applications.

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