PZT751T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 1A, 2V
Power - Max:	800mW
Frequency - Transition:	75MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	PZT751

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PZT751T1G Transistor is a single-bipolar junction, field effect transistor (BJT) designed to be used in a variety of areas including audio power, consumer electronics, television, satellite receivers and automotive displays. PZT751T1G device is manufactured using high-quality silicon material. The device has excellent switching performance and low power dissipation. The device has a dependable off-state leakage current, a reliable operation over wide temperature range, and utilizes low switching power across a wide voltage range. This device is suitable for use in digital and analog circuit applications. In operation, a semi-conductive material of the PZT751T1G device acts as a switch that can be used to control the current that is flowing through it. It works by using a base, emitter, and collector junction that when triggered, permits current to flow from the emitter to the collector.In the Bipolar configuration, the current flow is controlled via the junction’s ability to block or allow the flow. A current flow is formed when a forward bias is applied at the base-emitter-collector junction, which causes a base-emitter voltage to be formed. This voltage causes the base current to flow and the collector current to flow. The collector current is driven by the base current, which constitutes the gate current for the gate of the specified transistor.The PZT751T1G also features a high-speed current gain, which is the ratio of the maximum collector current to the base current and produces an approximately equivalent current amplification across the transistor. The fast turn-on time of the device allows faster switching of the current, which in turn helps reduce power dissipation while delivering optimal signal accuracy.The device has a dependable off-state leakage and on-state saturation current that allows it to be employed in various digital applications such as logic gates and counter circuits. Furthermore, the exceptional reverse breakdown voltage helps prevent over-voltage damage and destruction of the transistor. The PZT751T1G also has excellent temperature stability and reliability, making it suitable for use in consumer electronics and aerospace applications.The typical dielectric strength of the device is measured at 500V and the maximum junctions temperature rating is rated at 150°C. This allows for extended operating temperature ranges for industries such as automotive, consumer appliances and general voltage control applications.Overall, the PZT751T1G is an excellent choice for a variety of applications as it features a dependable off-state leakage, excellent switching performance, low power dissipation, and exceptional temperature stability and reliability. The fast turn-on time of the device also allows it to be used in mission-critical and other applications that require a rapid response. Additionally, the device’s high-speed current gain and reverse breakdown voltage helps reduce over-voltage damage while delivering optimal signal accuracy.

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