PZU6.8B1A,115 Allicdata Electronics
Allicdata Part #:

1727-8230-2-ND

Manufacturer Part#:

PZU6.8B1A,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 6.8V 320MW SOD323
More Detail: Zener Diode 6.8V 320mW ±2% Surface Mount SOD-323
DataSheet: PZU6.8B1A,115 datasheetPZU6.8B1A,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04245
6000 +: $ 0.03691
15000 +: $ 0.03137
30000 +: $ 0.02953
75000 +: $ 0.02768
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±2%
Power - Max: 320mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: PZU6V8
Description

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Diodes are fundamental components of any electrical circuit; they enable a high degree of flexibility in terms of determining the flow of current through a given system. One type of diode, called a zener diode, is commonly used to preserve a voltage or current level, or in the presence of large potential differences or a high degree of routing, to provide a built-in, highly reliable protective layer for the circuit. The PZU6.8B1A,115 is such a model, with typical features of a single zener diode.

The PZU6.8B1A,115 is designed for use in a variety of applications, from telecommunications and automotive to aerospace and medical. It is a single diode in a DO-201 enclosing and can provide a highly reliable protective layer for circuits with large potential differences or with significant areas for routing. In this manner, it serves as a voltage-controlled resistor (VCR), providing a high degree of control over the flow of current through a given circuit.

The working principle of the PZU6.8B1A,115 largely mirrors that of other zener diodes. It is composed of two regions; an anode and a cathode, which are connected through a junction known as the depletion layer. Through this layer, the potential difference across the diode is determined by the applied bias voltage, allowing it to achieve the desired level of current flow in response to the biasing conditions.

Unlike other types of diodes, the PZU6.8B1A,115 exhibits a well-defined current-voltage behavior that can be predetermined and determined. Specifically, it should act like a voltage source up to its breakdown voltage, after which it begins to act like a resistor. By judiciously selecting the breakdown voltage, the user can limit the maximum amount of current that can be delivered to the circuit.

Additionally, the PZU6.8B1A,115 also offers an improved thermal response over other models. This is due to its greater power dissipation capability, which allows it to more efficiently regulate the flow of current between the anode and the cathode, while generating less heat in the process.

Finally, the PZU6.8B1A,115 is also a highly reliable component, in terms of both its long-term electrical performance and its mechanical robustness. As a result, it is well-suited for use in a wide range of applications where high temperature and vibration are present. This makes the PZU6.8B1A,115 an ideal choice for a wide range of medium to high power applications.

The PZU6.8B1A,115 is a single zener diode which is designed for a variety of applications. It has a well-defined current-voltage behavior and offers improved thermal response over other models. With its high reliability and robust component design, the PZU6.8B1A,115 is an excellent choice for use in higher power applications.

The specific data is subject to PDF, and the above content is for reference

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