PZU7.5B3,115 Allicdata Electronics
Allicdata Part #:

1727-3765-2-ND

Manufacturer Part#:

PZU7.5B3,115

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 7.5V 310MW SOD323F
More Detail: Zener Diode 7.5V 310mW ±2% Surface Mount SOD-323F
DataSheet: PZU7.5B3,115 datasheetPZU7.5B3,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05292
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±2%
Power - Max: 310mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 4V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SOD-323F
Base Part Number: PZU7V5
Description

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Diodes - Zener - Single

The PZU7.5B3,115 is a highly reliable and efficient single Zener diode that offers a wide range of application options for electronics manufacturing and engineering.

Its wide applications include circuit protection, power supply compensation, and voltage regulation. It is capable of operating in wide temperature and climate ranges, as well as in high-power systems. The PZU7.5B3,115 has a current-handling capability of up to 4.5A and offers superior thermal characteristics.

The PZU7.5B3,115’s diode structure is designed to operate as a two-terminal device. It has a p-n junction, which has two terminals: anode and cathode. Anode voltage is applied to the anode, while reverse bias voltage (typically up to 7.5V) is applied to the cathode.

The diode’s inherent property of a reverse-breakdown voltage makes it an ideal device for voltage regulation purposes. When the current through the p-n junction increases, the temperature of the device also increases. This increases the reverse breakdown voltage, thereby leading to a stabilization of the output voltage.

The PZU7.5B3,115 can be used for a variety of other applications, such as for electrolytic capacitor replacement, noise filtering in pulse circuits, recovering and smoothing pulses, and for creating constant voltage. The diode can also be used for opto-electronic circuitry protection and for RF signal attenuation.

The PZU7.5B3,115 is constructed from a combination of semiconductor and epoxy. The semiconductor material used is silicon and the epoxy is used to form the package. The structure of the device ensures minimal contact resistance, which allows it to deliver reliable performance and superior power handling capabilities.

The PZU7.5B3,115 has a low forward voltage drop, which makes it a suitable choice for applications involving a high level of reverse-biassed current. Its high reverse-biassed voltage rating also makes it a reliable device for applications in power supplies.

The PZU7.5B3,115 is designed with a robust construction that allows it to withstand high operating temperatures, making it a suitable choice for applications in industrial settings. The device is also highly resistant to environmental stressors, such as humidity, dust, and vibration.

In conclusion, the PZU7.5B3,115 is a highly effective single Zener diode that can be used for a variety of different applications, including circuit protection, power supply compensation, and voltage regulation. Its inherent properties make it an ideal choice for applications involving a high level of reverse-biassed current and for those demanding reliable performance in harsh environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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