Q1117L601E3RP Allicdata Electronics
Allicdata Part #:

Q1117L601E3RP-ND

Manufacturer Part#:

Q1117L601E3RP

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: TRIAC TO92
More Detail: TRIAC TO92
DataSheet: Q1117L601E3RP datasheetQ1117L601E3RP Datasheet/PDF
Quantity: 1000
2000 +: $ 0.22007
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Triac Type: Standard
Current - Non Rep. Surge 50, 60Hz (Itsm): --
Configuration: Single
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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Thyristors - TRIACs is a type of power semiconductor device which is used as an electronic switch in order to control and switch electrical power. The Q1117L601E3RP power MOSFET is a 3rd quadrant, N-Channel, gate-turn-off (GTO) thyristor, that offers a voltage rating of 600 V and a current rating of 1 A. It is designed to be used as an alternative to traditional Thyristor-based, power MOSFET-based, and bidirectional Thyristor-based switching solutions.

The Q1117L601E3RP power MOSFET is typically used in lighting applications, industrial control, solar energy, and healthcare applications. In lighting applications, these devices offer excellent on-state current performance and precise gate control, which enables precise intensity control. In industrial control applications, these devices are widely used in controlling AC motors and pumps, making them a popular choice for machine tools, compressors and other applications. In solar energy applications, the Q1117L601E3RP power MOSFETs are ideal for switching and controlling solar panels to maximize their efficiency. In healthcare applications, these devices are used in the precise control of medical equipment and the precise measurement of electrical signals.

The working principle of the Q1117L601E3RP power MOSFET is based on the use of an insulated gate capacitor (IGC). This insulated gate capacitor is formed by bonding a capacitor between the gate and the anode of the device. When the gate voltage is applied to the device, the transistor is able to switch on and off relatively quickly. This allows the device to achieve high switching speeds and precise control of the circuit. Since the IGC can be tuned to different capacities, the device allows for precise control of the switching process.

The Q1117L601E3RP is a three-quadrant, N-channel, gate-turn-off (GTO) power MOSFET, which is designed to be used in a wide range of applications. This device is typically used in lighting applications, industrial control, solar energy, and healthcare applications. By using an insulated gate capacitor (IGC) in its design, the device allows for precise control of the switching process and high switching speeds. The device offers a voltage rating of 600 V and a current rating of 1 A, making it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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